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参数资料
| 型号： | BF1100 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | N-channel dual-gate MOSFET |
| 封装： | BF1100<SOT143B (SOT143B)|<<http://www.nxp.com/packages/SOT143B.html<1<week 47, 2002,; |
| 文件页数： | 14/15页 |
| 文件大小： | 311K |
| 代理商： | BF1100 |
NXP Semiconductors
BF1100; BF1100R
Dual-gate MOS-FETs
Legal information
Data sheet status
[1]
Please consult the most recently issued document before initiating or completing a design.
[2]
The term ‘short data sheet’ is explained in section “Definitions”.
[3]
The product status of device(s) described in this document may have changed since this document was published and may differ in case of multiple devices. The latest product status
information is available on the Internet at URL
http://www.nxp.com
.
Definitions
Draft —
The document is a draft version only. The content is still under
internal review and subject to formal approval, which may result in
modifications or additions. NXP Semiconductors does not give any
representations or warranties as to the accuracy or completeness of
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Short data sheet —
A short data sheet is an extract from a full data sheet
with the same product type number(s) and title. A short data sheet is intended
for quick reference only and should not be relied upon to contain detailed and
full information. For detailed and full information see the relevant full data
sheet, which is available on request via the local NXP Semiconductors sales
office. In case of any inconsistency or conflict with the short data sheet, the
full data sheet shall prevail.
Disclaimers
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Information in this document is believed to be accurate and
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information.
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specified use without further testing or modification.
Limiting values —
Stress above one or more limiting values (as defined in
the Absolute Maximum Ratings System of IEC 60134) may cause permanent
damage to the device. Limiting values are stress ratings only and operation of
the device at these or any other conditions above those given in the
Characteristics sections of this document is not implied. Exposure to limiting
values for extended periods may affect device reliability.
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subject to the general terms and conditions of commercial sale, as published
at
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, including those pertaining to warranty,
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Contact information
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Document status
[1][2]
Product status
[3]
Definition
Objective [short] data sheet
Development
This document contains data from the objective specification for product development.
Preliminary [short] data sheet
Qualification
This document contains data from the preliminary specification.
Product [short] data sheet
Production
This document contains the product specification.
Rev. 02 - 13 November 2007
14 of 15
相关PDF资料 |
PDF描述 |
|---|---|
| BF1100R | N-channel dual-gate MOSFET |
| BF1100R | N-channel dual-gate MOSFET |
| BF1101 | N-channel dual-gate MOSFET |
| BF1101 | N-channel dual-gate MOSFET |
| BF1101R | N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1100,215 | 功能描述:射频MOSFET小信号晶体管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1100/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Dual-Gate MOS-FETs |
| BF1100/WR | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Dual-Gate MOS-FETs |
| BF1100R | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual-gate MOS-FETs |
| BF1100R,215 | 功能描述:射频MOSFET小信号晶体管 TAPE7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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