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参数资料
| 型号： | BF1100WR |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封装： | BF1100WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<week 52, 2002,; |
| 文件页数： | 8/14页 |
| 文件大小： | 100K |
| 代理商： | BF1100WR |
1995 Apr 25
8
Philips Semiconductors
Product specification
Dual-gate MOS-FET
BF1100WR
Fig.14 Gate 1 current as a function of gate 2 voltage;
typical values.
V
DS
= 9 V.
R
G1
= 180 k
(connected to V
GG
); T
j
= 25
°
C.
handbook, halfpage
(
μ
A)
0
2
4
6
40
30
10
0
20
MLD167
VG2 S
8 V
7 V
6 V
5 V
4 V
VGG
Fig.15 Gate 1 current as a function of gate 2 voltage;
typical values.
V
DS
= 12 V.
R
G1
= 250 k
(connected to V
GG
); T
j
= 25
°
C.
handbook, halfpage
(
μ
A)
0
2
4
6
40
30
10
0
20
MLD168
VG2 S
11 V
10 V
9 V
8 V
7 V
VGG
Fig.16 Drain current as a function of the gate 2
voltage; typical values; see Fig.26.
V
DS
= 9 V.
R
G1
= 180 k
(connected to V
GG
); T
j
= 25
°
C.
handbook, halfpage
ID
(mA)
0
2
4
6
0
MLD169
12
8
4
8 V
7 V
6 V
5 V
4 V
VGG
VG2 S
V
DS
= 12 V.
R
G1
= 250 k
(connected to V
GG
); T
j
= 25
°
C.
Fig.17 Drain current as a function of the gate 2
voltage; typical values; see Fig.26.
handbook, halfpage
ID
(mA)
0
2
4
6
0
MLD170
12
8
4
11 V
10 V
9 V
8 V
7 V
VGG
VG2 S
相关PDF资料 |
PDF描述 |
|---|---|
| BF1100WR | N-channel dual-gate MOSFET |
| BF1100 | N-channel dual-gate MOSFET |
| BF1100 | N-channel dual-gate MOSFET |
| BF1100R | N-channel dual-gate MOSFET |
| BF1100R | N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1100WR,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1101 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
| BF1101,215 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1101R | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
| BF1101R,215 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 7V 30mA 200mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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