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| 型号： | BF1206F |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1206F<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件页数： | 1/21页 |
| 文件大小： | 320K |
| 代理商： | BF1206F |
1. Product profile
1.1 General description
The BF1206F is a combination of two different dual gate MOSFET amplifiers with shared
source and gate2 leads.
The source and substrate are interconnected. Internal bias circuits enable Direct Current
(DC) stabilization and a very good cross-modulation performance during Automatic Gain
Control (AGC). Integrated diodes between the gates and source protect against excessive
input voltage surges. The transistor is encapsulated in a SOT666 micro-miniature plastic
package.
1.2 Features and benefits
Two low noise gain controlled amplifiers in a single package
Superior cross-modulation performance during AGC
High forward transfer admittance
High forward transfer admittance to input capacitance ratio
Suited for 3 volt applications
1.3 Applications
Gain controlled low noise amplifiers for Very High Frequency (VHF) and Ultra High
Frequency (UHF) applications with 3 V supply voltage, such as digital and analog
television tuners
BF1206F
Dual N-channel dual gate MOSFET
Rev. 2 — 7 September 2011
Product data sheet
ST6
CAUTION
This device is sensitive to ElectroStatic Discharge (ESD). Therefore care should be taken
during transport and handling.
相关PDF资料 |
PDF描述 |
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| BF1206 | Dual N-channel dual-gate MOSFET |
| BF1206 | Dual N-channel dual-gate MOSFET |
| BF1207 | Dual N-channel dual-gate MOSFET |
| BF1207 | Dual N-channel dual-gate MOSFET |
| BF1208D | Dual N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1206F,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1207 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1207 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1207,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1208 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
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