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| 型号： | BF1206F |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1206F<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件页数： | 11/21页 |
| 文件大小： | 320K |
| 代理商： | BF1206F |
BF1206F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
11 of 21
NXP Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
[1]
Calculated from measured S-parameters.
[2]
Measured in
Figure 32
test circuit.
8.3.1
Graphs for amplifier B
Xmod
cross modulation
input level for k = 1 %; f
w
= 50 MHz; f
unw
= 60 MHz
at 0 dB AGC
at 10 dB AGC
at 40 dB AGC
[2]
89
-
93
-
85
98
-
-
-
dB
V
dB
V
dB
V
Table 11.
Common source; T
amb
= 25
C; V
G2-S
= 2.5 V; V
DS
= 2.8 V; I
D
= 4 mA.
Symbol Parameter
Dynamic characteristics for amplifier B
…continued
Conditions
Min
Typ
Max Unit
(1) V
G2-S
= 2.5 V.
(2) V
G2-S
= 2.0 V.
(3) V
G2-S
= 1.5 V.
(4) V
G2-S
= 1.0 V.
V
DS(B)
= 2.8 V; T
j
= 25
C.
(1) V
G1-S(B)
= 1.3 V.
(2) V
G1-S(B)
= 1.2 V.
(3) V
G1-S(B)
= 1.1 V.
(4) V
G1-S(B)
= 1.0 V.
(5) V
G1-S(B)
= 0.9 V.
(6) V
G1-S(B)
= 0.85 V.
(7) V
G1-S(B)
= 0.8 V.
V
G2-S
= 2.5 V; T
j
= 25
C.
Fig 18. Amplifier B: output characteristics; typical
values
Fig 17. Amplifier B: transfer characteristics; typical
values
V
G1
S
(V)
0
2.0
1.6
0.8
1.2
0.4
001aad911
5
10
15
I
D
(mA)
0
(1)
(2)
(3)
(4)
V
DS
(V)
0
4
3
1
2
001aad912
8
4
12
16
I
D
(mA)
0
(7)
(6)
(5)
(4)
(3)
(2)
(1)
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| BF1206F,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1207 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1207 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1207,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1208 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
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