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| 型号： | BF1206F |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1206F<SOT666 (SOT666)|<<http://www.nxp.com/packages/SOT666.html<1<Always Pb-free,; |
| 文件页数： | 15/21页 |
| 文件大小： | 320K |
| 代理商： | BF1206F |
BF1206F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
15 of 21
NXP Semiconductors
BF1206F
Dual N-channel dual gate MOSFET
V
DS(B)
= 2.8 V; V
G2-S
= 2.5 V; V
DS(A)
= 0 V; I
D(B)
= 4 mA.
Fig 28. Amplifier B: input admittance and phase as a
function of frequency; typical values
V
DS(B)
= 2.8 V; V
G2-S
= 2.5 V; V
DS(A)
= 0 V; I
D(B)
= 4 mA.
Fig 29. Amplifier B: forward transfer admittance and
phase as a function of frequency; typical
values
V
DS(B)
= 2.8 V; V
G2-S
= 2.5 V; V
DS(A)
= 0 V; I
D(B)
= 4 mA.
Fig 30. Amplifier B: reverse transfer admittance and
phase as a function of frequency: typical
values
V
DS(B)
= 2.8 V; V
G2-S
= 2.5 V; V
DS(A)
= 0 V; I
D(B)
= 4 mA.
Fig 31. Amplifier B: output admittance and phase as a
function of frequency; typical values
001aad922
f (Mhz)
10
10
3
10
2
10
1
1
10
10
2
b
is
, g
is
(mS)
10
2
b
is
g
is
f (MHz )
10
10
3
10
2
001aad923
10
10
2
Y
fs
(mS)
fs
(deg)
1
10
10
2
1
Y
fs
fs
rs
(deg)
Y
rs
001aad924
10
1
10
2
10
2
1
Y
rs
(
μ
S)
10
3
f (MHz)
10
X
10
3
10
2
rs
10
3
10
1
001aad925
1
10
1
10
b
os
, g
os
(mS)
10
2
f (MHz)
10
10
3
10
2
b
os
g
os
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| BF1206 | Dual N-channel dual-gate MOSFET |
| BF1206 | Dual N-channel dual-gate MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1206F,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1207 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1207 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1207,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1208 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
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