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参数资料
| 型号： | BF1207 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1207<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 5/23页 |
| 文件大小： | 270K |
| 代理商： | BF1207 |
BF1207
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
5 of 23
NXP Semiconductors
BF1207
Dual N-channel dual gate MOSFET
[1]
R
G1
connects gate1 (A) to V
GG
= 5 V (see
Figure 3
).
R
G1
connects gate1 (B) to V
GG
= 0 V (see
Figure 3
).
[2]
I
G1-S
gate1 cut-off current
V
G2-S
= V
DS(A)
= 0 V
amplifier A; V
G1-S(A)
= 5 V; V
DS(B)
= 0 V
amplifier B; V
G1-S(A)
= 0 V; I
D(B)
= 0 A
V
G2-S
= 4 V; V
G1-S
= V
DS(A)
= V
DS(B)
= 0 V;
-
-
-
-
-
-
50
50
20
nA
nA
nA
I
G2-S
gate2 cut-off current
Table 7.
T
j
= 25
C.
Symbol
Static characteristics
…continued
Parameter
Conditions
Min
Typ
Max Unit
(1) I
D(A)
; R
G1
= 47 k
.
(2) I
D(A)
; R
G1
= 68 k
.
(3) I
D(A)
; R
G1
= 100 k
.
(4) I
D(B)
; R
G1
= 100 k
.
(5) I
D(B)
; R
G1
= 68 k
.
(6) I
D(B)
; R
G1
= 47 k
.
V
DS(A)
= V
DS(B)
= 5 V; V
G2-S
= 4 V; T
j
= 25
C.
Fig 2.
Drain currents of MOSFET A and B as function
of V
GG
V
GG
= 5 V: amplifier A is on; amplifier B is off.
V
GG
= 0 V: amplifier A is off; amplifier B is on.
Fig 3.
Functional diagram
001aac742
8
12
4
16
20
I
D
(mA)
0
V
GG
(V)
0
5
4
2
3
1
(2)
(5)
(4)
(6)
(3)
(1)
001aac881
R
G1
V
GG
G1A
G2
G1B
DA
S
DB
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相关代理商/技术参数 |
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|---|---|
| BF1207 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1207,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1208 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1208 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1208,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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