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参数资料
| 型号： | BF1207 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1207<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 8/23页 |
| 文件大小： | 270K |
| 代理商： | BF1207 |
BF1207
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 2 — 7 September 2011
8 of 23
NXP Semiconductors
BF1207
Dual N-channel dual gate MOSFET
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
V
DS(A)
= 5 V; T
j
= 25
C.
Fig 6.
Amplifier A: forward transfer admittance as a
function of drain current; typical values
(1) R
G1(A)
= 39 k
.
(2) R
G1(A)
= 47 k
(3) R
G1(A)
= 68 k
.
(4) R
G1(A)
= 82 k
.
(5) R
G1(A)
= 100 k
(6) R
G1(A)
= 120 k
.
(7) R
G1(A)
= 150 k
.
V
G2-S
= 4 V; T
j
= 25
C.
Fig 7.
Amplifier A: drain current as a function of V
DS
and V
GG
; typical values
V
G2-S
= 4 V, T
j
= 25
C, R
G1(B)
= 68 k
(connected to ground); see
Figure 3
.
Amplifier A: drain current of amplifier A as a function of supply voltage of A and B amplifier; typical
values
Fig 8.
I
D
(mA)
0
32
24
8
16
001aac884
20
10
30
40
y
fs
(mS)
0
(1)
(2)
(6)
(7)
(5)
(4)
(3)
001aac885
(1)
V
GG
=
V
DS
(V)
0
6
4
2
I
D
(mA)
(2)
(3)
(4)
(5)
(7)
5
10
15
20
25
0
(6)
V
supply
(V)
0
5
4
2
3
1
001aac886
8
12
4
16
20
I
D
(mA)
0
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1207 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1207,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1208 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1208 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1208,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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