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参数资料
| 型号： | BF1210 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1210<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 14/21页 |
| 文件大小： | 252K |
| 代理商： | BF1210 |
BF1210_1
NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2006
14 of 21
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
(1) R
G1(B)
= 68 k
.
(2) R
G1(B)
= 82 k
.
(3) R
G1(B)
= 100 k
.
(4) R
G1(B)
= 120 k
.
(5) R
G1(B)
= 150 k
.
(6) R
G1(B)
= 180 k
.
(7) R
G1(B)
= 220 k
.
V
G2-S
= 5 V; R
G1(B)
connected to V
GG
; T
j
= 25
°
C.
Fig 23. Amplifier B: drain current as a function of V
DS
and V
GG
; typical values
(1) V
GG
= 5.0 V.
(2) V
GG
= 4.5 V.
(3) V
GG
= 4.0 V.
(4) V
GG
= 3.5 V.
(5) V
GG
= 3.0 V.
R
G1(B)
= 150 k
; T
j
= 25
°
C.
Fig 24. Amplifier B: drain current as a function of gate2
voltage; typical values
001aaf497
V
GG
= V
DS
(V)
0
5
4
2
3
1
10
15
5
20
25
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
001aaf498
V
G2-S
(V)
0
5
4
2
3
1
8
4
12
16
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
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| BF1211 | N-channel dual-gate MOSFET |
| BF1211 | N-channel dual-gate MOSFET |
| BF1211R | N-channel dual-gate MOSFET |
| BF1211WR | N-channel dual-gate MOSFET |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1210 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1210,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF-1210-05SV | 制造商:Amphenol Corporation 功能描述:CONNECTOR - Bulk |
| BF-1210-05SV06 | 制造商:Amphenol Corporation 功能描述:CONNECTOR - Bulk |
| BF-1210-05SV06-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
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