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| 型号： | BF1210 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1210<SOT363 (SOT363)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,; |
| 文件页数： | 6/21页 |
| 文件大小： | 252K |
| 代理商： | BF1210 |
BF1210_1
NXP B.V. 2006. All rights reserved.
Product data sheet
Rev. 01 — 25 October 2006
6 of 21
NXP Semiconductors
BF1210
Dual N-channel dual gate MOSFET
8.1.1
Graphs for amplifier A
(1) V
G2-S
= 4.0 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3.0 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2.0 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1.0 V.
V
DS(A)
= 5 V; T
j
= 25
°
C.
(1) V
G1-S(A)
= 1.8 V.
(2) V
G1-S(A)
= 1.7 V.
(3) V
G1-S(A)
= 1.6 V.
(4) V
G1-S(A)
= 1.5 V.
(5) V
G1-S(A)
= 1.4 V.
(6) V
G1-S(A)
= 1.3 V.
(7) V
G1-S(A)
= 1.2 V.
(8) V
G1-S(A)
= 1.1 V.
(9) V
G1-S(A)
= 1.0 V.
V
G2-S
= 4 V; T
j
= 25
°
C.
Fig 3.
Amplifier A: output characteristics; typical
values
Fig 2.
Amplifier A: transfer characteristics; typical
values
001aaf476
V
G1-S
(V)
0
2.0
1.5
0.5
1.0
20
10
30
40
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
001aaf477
V
DS
(V)
0
6
4
2
10
20
30
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1210 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1210,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF-1210-05SV | 制造商:Amphenol Corporation 功能描述:CONNECTOR - Bulk |
| BF-1210-05SV06 | 制造商:Amphenol Corporation 功能描述:CONNECTOR - Bulk |
| BF-1210-05SV06-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
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