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| 型号： | BF1212R |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封装： | BF1212R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,; |
| 文件页数： | 6/16页 |
| 文件大小： | 429K |
| 代理商： | BF1212R |
2003 Nov 14
6
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
handbook, halfpage
0
20
10
0
0.5
2.5
(4)
(5)
(6)
1
1.5
2
MLE233
VG1-S (V)
ID
(mA)
(7)
(1)
(2)
(3)
Fig.5 Transfer characteristics; typical values.
V
DS
= 5 V.
T
j
= 25
C.
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
handbook, halfpage
ID
(mA)
0
2
(1)
(2)
(6)
(7)
(8)
4
VDS (V)
6
24
8
0
16
MLE234
(3)
(4)
(5)
(9)
Fig.6 Output characteristics; typical values.
V
G2-S
= 4 V.
T
j
= 25
C.
(1) V
G1-S
= 1.6 V.
(2) V
G1-S
= 1.5 V.
(3) V
G1-S
= 1.4 V.
(4) V
G1-S
= 1.3 V.
(5) V
G1-S
= 1.2 V.
(6) V
G1-S
= 1.1 V.
(7) V
G1-S
= 1.0 V.
(8) V
G1-S
= 0.9 V.
(9) V
G1-S
= 0.8 V.
handbook, halfpage
(
μ
A)
0
VG1-S (V)
0.5
1
2
0
80
1.5
60
40
20
MLE235
(2)
(3)
(1)
(5)
(6)
(7)
(4)
Fig.7
Gate 1 current as a function of gate 1
voltage; typical values.
V
DS
= 5 V.
T
j
= 25
C.
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
handbook, halfpage
yfs
(mS)
0
4
(1)
(2)
(3)
(4)
(5)
(7)
20
30
10
0
20
8
ID (mA)
12
16
MLE236
(6)
Fig.8
Forward transfer admittance as a function
of drain current; typical values.
V
DS
= 5 V.
T
j
= 25
C.
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1212R,215 | 功能描述:射频MOSFET小信号晶体管 N-CH DUAL GATE 6V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1212WR | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
| BF1212WR,115 | 功能描述:射频MOSFET小信号晶体管 N-CH DUAL GATE 6V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1214 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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