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参数资料
| 型号： | BF1212R |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封装： | BF1212R<SOT143R (SOT143R)|<<http://www.nxp.com/packages/SOT143R.html<1<week 47, 2002,; |
| 文件页数： | 9/16页 |
| 文件大小： | 429K |
| 代理商： | BF1212R |
2003 Nov 14
9
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
handbook, halfpage
MLE245
10
f (MHz)
yis
(mS)
10
2
10
3
2
10
1
10
1
bis
gis
Fig.17 Input admittance as a function of frequency;
typical values.
V
DS
= 5 V; V
G2
= 4 V.
I
D
= 12 mA; T
amb
= 25
C.
handbook, halfpage
MLE246
10
f (MHz)
10
2
10
3
3
10
2
10
1
10
3
10
2
10
1
rs
(deg)
yrs
(
μ
S)
yrs
rs
Fig.18 Reverse transfer admittance and phase as
functions of frequency; typical values.
V
DS
= 5 V; V
G2
= 4 V.
I
D
= 12 mA; T
amb
= 25
C.
handbook, halfpage
10
2
1
MLE247
10
10
10
2
1
f (MHz)
10
3
10
2
fs
(deg)
yfs
(mS)
yfs
fs
Fig.19 Forward transfer admittance and phase as
functions of frequency; typical values.
V
DS
= 5 V; V
G2
= 4 V.
I
D
= 12 mA; T
amb
= 25
C.
handbook, halfpage
1
10
1
MLE248
10
f (MHz)
10
3
10
2
yos
(mS)
gos
bos
Fig.20 Output admittance as a function of
frequency; typical values.
V
DS
= 5 V; V
G2
= 4 V.
I
D
= 12 mA; T
amb
= 25
C.
相关PDF资料 |
PDF描述 |
|---|---|
| BF1212WR | N-channel dual-gate MOSFET |
| BF1214 | Dual N-channel dual-gate MOSFET |
| BF1214 | Dual N-channel dual-gate MOSFET |
| BF1215 | Dual N-channel dual-gate MOSFET |
| BF1216 | Dual N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1212R,215 | 功能描述:射频MOSFET小信号晶体管 N-CH DUAL GATE 6V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1212WR | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel dual-gate MOS-FETs |
| BF1212WR,115 | 功能描述:射频MOSFET小信号晶体管 N-CH DUAL GATE 6V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1214 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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