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参数资料
| 型号： | BF1212WR |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封装： | BF1212WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<Always Pb-free,;BF1212WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<Alwa |
| 文件页数： | 3/16页 |
| 文件大小： | 429K |
| 代理商： | BF1212WR |
2003 Nov 14
3
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
ORDERING INFORMATION
LIMITING VALUES
In accordance with the Absolute Maximum Rating System (IEC 60134).
Note
1.
T
s
is the temperature of the soldering point of the source lead.
THERMAL CHARACTERISTICS
CAUTION
This product is supplied in anti-static packing to prevent damage caused by electrostatic discharge during transport
and handling.
TYPE NUMBER
PACKAGE
NAME
DESCRIPTION
VERSION
BF1212
BF1212R
BF1212WR
plastic surface mounted package; 4 leads
plastic surface mounted package; reverse pinning; 4 leads
plastic surface mounted package; reverse pinning; 4 leads
SOT143B
SOT143R
SOT343R
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
V
DS
I
D
I
G1
I
G2
P
tot
drain-source voltage
drain current (DC)
gate 1 current
gate 2 current
total power dissipation
BF1212; BF1212R
BF1212WR
storage temperature
junction temperature
6
30
10
10
V
mA
mA
mA
T
s
116
C; note 1
T
s
122
C; note 1
65
180
180
+150
150
mW
mW
C
C
T
stg
T
j
SYMBOL
PARAMETER
VALUE
UNIT
R
th j-s
thermal resistance from junction to soldering point
BF1212; BF1212R
BF1212WR
185
155
K/W
K/W
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1212WR,115 | 功能描述:射频MOSFET小信号晶体管 N-CH DUAL GATE 6V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1214 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214/L,115 | 制造商:NXP Semiconductors 功能描述:- Tape and Reel |
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