- 您现在的位置：买卖IC网 > PDF目录378411 > BF1212WR (NXP Semiconductors N.V.) N-channel dual-gate MOSFET PDF资料下载
参数资料
| 型号： | BF1212WR |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | N-channel dual-gate MOSFET |
| 封装： | BF1212WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<Always Pb-free,;BF1212WR<SOT343R (SOT343R)|<<http://www.nxp.com/packages/SOT343R.html<1<Alwa |
| 文件页数： | 7/16页 |
| 文件大小： | 429K |
| 代理商： | BF1212WR |
2003 Nov 14
7
NXP Semiconductors
Product specification
N-channel dual-gate MOS-FETs
BF1212; BF1212R; BF1212WR
handbook, halfpage
0
16
8
0
10
50
20
30
40
MLE237
IG1 (
μ
A)
ID
(mA)
Fig.9
Drain current as a function of gate 1 current;
typical values.
V
DS
= 5 V; V
G2-S
= 4 V.
T
j
= 25
C.
handbook, halfpage
ID
(mA)
0
1
5
12
4
0
8
2
VGG (V)
3
4
MLE238
Fig.10 Drain current as a function of gate 1 supply
voltage; typical values.
V
DS
= 5 V; V
G2-S
= 4 V; T
j
= 25
C.
R
G1
= 150 k
(connected to V
GG
); see Fig.21.
handbook, halfpage
(mA)
0
2
(2)
(1)
(3)
(4)
(5)
(6)
(7)
(8)
4
VGG
=
VDS (V)
6
0
16
12
8
4
MLE239
Fig.11 Drain current as a function of gate 1 and
drain supply voltage; typical values.
V
G2-S
= 4 V; T
j
= 25
C.
R
connected to V
GG
;
see Fig.21.
(1) R
G1
= 47 k
.
(2) R
G1
= 56 k
.
(3) R
G1
= 82 k
.
(4) R
G1
= 100 k
.
(5) R
G1
= 120 k
.
(6) R
G1
= 150 k
.
(7) R
G1
= 180 k
.
(8) R
G1
= 220 k
.
handbook, halfpage
ID
(mA)
0
2
(1)
(2)
(3)
(4)
(5)
4
VG2-S (V)
6
12
4
0
8
MLE240
V
DS
= 5 V; T
j
= 25
C.
R
= 150 k
(connected to V
GG
);
see Fig.21.
Fig.12 Drain current as a function of gate 2
voltage; typical values.
(1) V
GG
= 5 V.
(2) V
GG
= 4.5 V.
(3) V
GG
= 4 V.
(4) V
GG
= 3.5 V.
(5) V
GG
= 3 V.
相关PDF资料 |
PDF描述 |
|---|---|
| BF1214 | Dual N-channel dual-gate MOSFET |
| BF1214 | Dual N-channel dual-gate MOSFET |
| BF1215 | Dual N-channel dual-gate MOSFET |
| BF1216 | Dual N-channel dual-gate MOSFET |
| BF1217WR | N-channel dual-gate MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1212WR,115 | 功能描述:射频MOSFET小信号晶体管 N-CH DUAL GATE 6V RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Dual N-channel dual gate MOSFET |
| BF1214 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214/L,115 | 制造商:NXP Semiconductors 功能描述:- Tape and Reel |
发布紧急采购，3分钟左右您将得到回复。