参数资料
型号: BF1214
厂商: NXP Semiconductors N.V.
元件分类: MOSFETs
英文描述: Dual N-channel dual-gate MOSFET
封装: BF1214<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1214/L<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-fr
文件页数: 18/18页
文件大小: 211K
代理商: BF1214
NXP Semiconductors
BF1214
Dual N-channel dual gate MOSFET
NXP B.V. 2007.
All rights reserved.
For more information, please visit: http://www.nxp.com
For sales office addresses, please send an email to: salesaddresses@nxp.com
Date of release: 30 October 2007
Document identifier: BF1214_1
Please be aware that important notices concerning this document and the product(s)
described herein, have been included in section ‘Legal information’.
15. Contents
1
1.1
1.2
1.3
1.4
2
3
4
5
6
7
8
8.1
8.2
8.2.1
8.2.2
8.3
8.3.1
8.3.2
9
10
11
12
13
13.1
13.2
13.3
13.4
14
15
Product profile . . . . . . . . . . . . . . . . . . . . . . . . . . 1
General description. . . . . . . . . . . . . . . . . . . . . . 1
Features . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Applications . . . . . . . . . . . . . . . . . . . . . . . . . . . 1
Quick reference data. . . . . . . . . . . . . . . . . . . . . 2
Pinning information. . . . . . . . . . . . . . . . . . . . . . 2
Ordering information. . . . . . . . . . . . . . . . . . . . . 2
Marking. . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 3
Limiting values. . . . . . . . . . . . . . . . . . . . . . . . . . 3
Thermal characteristics. . . . . . . . . . . . . . . . . . . 4
Static characteristics. . . . . . . . . . . . . . . . . . . . . 4
Dynamic characteristics . . . . . . . . . . . . . . . . . . 5
Graphs for amplifier A and B . . . . . . . . . . . . . . 6
Graphs for amplifier A. . . . . . . . . . . . . . . . . . . . 9
Scattering parameters for amplifier A . . . . . . . 11
Noise data for amplifier A . . . . . . . . . . . . . . . . 11
Graphs for amplifier B. . . . . . . . . . . . . . . . . . . 12
Scattering parameters for amplifier B . . . . . . . 14
Noise data for amplifier B . . . . . . . . . . . . . . . . 14
Test information. . . . . . . . . . . . . . . . . . . . . . . . 14
Package outline . . . . . . . . . . . . . . . . . . . . . . . . 15
Abbreviations. . . . . . . . . . . . . . . . . . . . . . . . . . 16
Revision history. . . . . . . . . . . . . . . . . . . . . . . . 16
Legal information. . . . . . . . . . . . . . . . . . . . . . . 17
Data sheet status . . . . . . . . . . . . . . . . . . . . . . 17
Definitions. . . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Disclaimers. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Trademarks. . . . . . . . . . . . . . . . . . . . . . . . . . . 17
Contact information. . . . . . . . . . . . . . . . . . . . . 17
Contents . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 18
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相关代理商/技术参数
参数描述
BF1214 T/R 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS(导通): 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel
BF1214,115 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS(导通): 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel
BF1214/L,115 制造商:NXP Semiconductors 功能描述:- Tape and Reel
BF-1214-07SV-Y70 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk
BF1215,115 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS(导通): 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel