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| 型号： | BF1214 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | MOSFETs |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 封装： | BF1214<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-free,;BF1214/L<SOT363 (TSSOP6)|<<http://www.nxp.com/packages/SOT363.html<1<Always Pb-fr |
| 文件页数： | 2/18页 |
| 文件大小： | 211K |
| 代理商： | BF1214 |
BF1214_1
NXP B.V. 2007. All rights reserved.
Product data sheet
Rev. 01 — 30 October 2007
2 of 18
NXP Semiconductors
BF1214
Dual N-channel dual gate MOSFET
1.4 Quick reference data
[1]
T
sp
is the temperature at the soldering point of the source lead.
Calculated from S-parameters.
[2]
[3]
Measured in
Figure 24
test circuit.
2.
Pinning information
3.
Ordering information
Table 1.
Symbol Parameter
V
DS
drain-source voltage
I
D
drain current
P
tot
total power dissipation
|
y
fs
|
forward transfer admittance
Quick reference data for amplifier A and B
Conditions
DC
DC
T
sp
≤
107
°
C
f = 100 MHz; T
j
= 25
°
C;
I
D
= 18 mA
f = 100 MHz
f = 100 MHz
f = 400 MHz; Y
S
= Y
S(opt)
f = 800 MHz; Y
S
= Y
S(opt)
input level for k = 1 % at
40 dB AGC; f
w
= 50 MHz;
f
unw
= 60 MHz
Min
-
-
Typ
-
-
-
32
Max Unit
6
30
180
37
V
mA
mW
mS
[1]
-
27
C
iss(G1)
C
rss
NF
input capacitance at gate1
reverse transfer capacitance
noise figure
[2]
-
2.2
20
0.9
1.2
105
2.7
-
1.5
1.8
-
pF
fF
dB
dB
dB
μ
V
[2]
-
-
-
Xmod
cross modulation
[3]
102
T
j
junction temperature
-
-
150
°
C
Table 2.
Pin
1
2
3
4
5
6
Discrete pinning
Description
drain (AMP A)
source
drain (AMP B)
gate1 (AMP B)
gate2
gate1 (AMP A)
Simplified outline
Symbol
1
3
2
4
5
6
sym119
AMP A
DA
S
DB
G1A
G2
G1B
AMP B
Table 3.
Type number
Ordering information
Package
Name
-
Description
plastic surface-mounted package; 6 leads
Version
SOT363
BF1214
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1214 T/R | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214,115 | 功能描述:射频MOSFET小信号晶体管 TAPE-7 MOS-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1214/L,115 | 制造商:NXP Semiconductors 功能描述:- Tape and Reel |
| BF-1214-07SV-Y70 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF1215,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
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