- 您现在的位置：买卖IC网 > PDF目录378411 > BF1215 (NXP SEMICONDUCTORS) Dual N-channel dual-gate MOSFET PDF资料下载
参数资料
| 型号： | BF1215 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | MICRO MINIATURE, PLASTIC, SC-88, 6 PIN |
| 文件页数： | 11/22页 |
| 文件大小： | 262K |
| 代理商： | BF1215 |
BF1215_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2010
11 of 22
NXP Semiconductors
BF1215
Dual N-channel dual gate MOSFET
8.4 Graphics for amplifier B
(1) V
G2-S
= 4 V.
(2) V
G2-S
= 3.5 V.
(3) V
G2-S
= 3 V.
(4) V
G2-S
= 2.5 V.
(5) V
G2-S
= 2 V.
(6) V
G2-S
= 1.5 V.
(7) V
G2-S
= 1 V.
V
DS(B)
= 5 V; V
DS(A)
= V
G1-S(A)
= 0 V; T
j
= 25
°
C.
(1) V
G1-S(B)
= 1.9 V.
(2) V
G1-S(B)
= 1.8 V.
(3) V
G1-S(B)
= 1.7 V.
(4) V
G1-S(B)
= 1.6 V.
(5) V
G1-S(B)
= 1.5 V.
(6) V
G1-S(B)
= 1.4 V.
(7) V
G1-S(B)
= 1.3 V.
(8) V
G1-S(B)
= 1.2 V.
(9) V
G1-S(B)
= 1.1 V.
V
G2-S
= 4 V; V
DS(A)
= V
G1-S(A)
= 0 V; T
j
= 25
°
C.
Fig 17. Amplifier B output characteristics;
typical values
Fig 16. Amplifier B transfer characteristics;
typical values
V
G1-S
(V)
0
2.5
2.0
1.0
1.5
0.5
001aal562
10
20
30
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
V
DS
(V)
0
6
4
2
001aal563
10
20
30
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
(7)
(8)
(9)
相关PDF资料 |
PDF描述 |
|---|---|
| BF1216 | Dual N-channel dual-gate MOSFET |
| BF1217WR | N-channel dual-gate MOSFET |
| BF1218 | Dual N-channel dual-gate MOSFET |
| BF1218 | Dual N-channel dual-gate MOSFET |
| BF245A | N-channel FET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1215,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1216,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF-1216-10SV-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF1216115 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF-1216-24SV06-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
发布紧急采购，3分钟左右您将得到回复。