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参数资料
| 型号： | BF1215 |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | Dual N-channel dual-gate MOSFET |
| 中文描述： | 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET |
| 封装： | MICRO MINIATURE, PLASTIC, SC-88, 6 PIN |
| 文件页数： | 8/22页 |
| 文件大小： | 262K |
| 代理商： | BF1215 |
BF1215_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2010
8 of 22
NXP Semiconductors
BF1215
Dual N-channel dual gate MOSFET
V
DS(A)
= V
DS(B)
= V
sup
; V
G2-S
= 4 V; T
j
= 25
°
C;
R
G1
= 39 k
Ω
(connected to ground); see
Figure 2
.
(1) V
DS(B)
= 4 V.
(2) V
DS(B)
= 3.5 V.
(3) V
DS(B)
= 3 V.
(4) V
DS(B)
= 2.5 V.
(5) V
DS(B)
= 2 V.
(6) V
DS(B)
= 1.5 V.
V
DS(A)
= 5 V; V
G1-S(B)
= 0 V; gate1 (
amplifier
A) is open;
T
j
= 25
°
C.
Fig 8.
Amplifier A drain current as a function of gate2
voltage; typical values
Fig 7.
Amplifier A drain current as a function of the
supply voltage to amplifiers A and B;
typical values
V
DS(A)
= V
DS(B)
= 5 V; V
G1-S(B)
= 0 V; f
w
= 50 MHz;
f
unw
= 60 MHz; T
amb
= 25
°
C; see
Figure 32
.
Amplifier A unwanted voltage for 1 %
cross modulation as a function of gain
reduction; typical values
V
DS(A)
= V
DS(B)
= 5 V; V
G1-S(B)
= 0 V; f = 50 MHz;
T
j
= 25
°
C; see
Figure 32
.
Fig 10. Amplifier A gain reduction as a function of
AGC voltage; typical values
Fig 9.
V
sup
(V)
0
5
4
2
3
1
001aal553
10
5
15
20
I
D
(mA)
0
V
G2-S
(V)
0
5
4
2
3
1
001aal554
20
10
30
40
I
D
(mA)
0
(1)
(2)
(3)
(4)
(5)
(6)
gain reduction (dB)
0
50
40
20
30
10
001aal555
100
90
110
120
Xmod
(dB
μ
V)
80
V
AGC
(V)
0
4
3
1
2
001aal556
30
20
40
10
0
gain
reduction
(dB)
50
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF1215,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF1216,115 | 功能描述:射频MOSFET小信号晶体管 Dual N-Channel 6V 30mA 180mW RoHS:否 制造商:NXP Semiconductors 配置:Dual Dual Gate 晶体管极性:N-Channel 电阻汲极/源极 RDS（导通）: 汲极/源极击穿电压:6 V 闸/源击穿电压:6 V 漏极连续电流:30 mA 功率耗散:180 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SC-88 封装:Reel |
| BF-1216-10SV-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
| BF1216115 | 制造商:NXP 功能描述: 制造商:NXP Semiconductors 功能描述: |
| BF-1216-24SV06-Y103 | 制造商:Amphenol Corporation 功能描述:MIL-C-83723 FIREWALL - Bulk |
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