参数资料
型号: BF1215
厂商: NXP SEMICONDUCTORS
元件分类: 小信号晶体管
英文描述: Dual N-channel dual-gate MOSFET
中文描述: 2 CHANNEL, UHF BAND, Si, N-CHANNEL, RF SMALL SIGNAL, MOSFET
封装: MICRO MINIATURE, PLASTIC, SC-88, 6 PIN
文件页数: 9/22页
文件大小: 262K
代理商: BF1215
BF1215_1
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2010. All rights reserved.
Product data sheet
Rev. 01 — 6 May 2010
9 of 22
NXP Semiconductors
BF1215
Dual N-channel dual gate MOSFET
V
DS(A)
= V
DS(B)
= 5 V; V
G1-S(B)
= 0 V; f = 50 MHz;
T
j
= 25
°
C; see
Figure 32
.
Fig 11. Amplifier A drain current as a function of gain
reduction; typical values
V
DS(A)
= 5 V; V
G2-S
= 4 V; V
DS(B)
= V
G1-S(B)
= 0 V;
I
D(A)
= 19 mA; T
j
= 25
°
C.
Fig 12. Amplifier A input admittance as a function of
frequency; typical values
V
DS(A)
= 5 V; V
G2-S
= 4 V; V
DS(B)
= V
G1-S(B)
= 0 V;
I
D(A)
= 19 mA; T
j
= 25
°
C.
Fig 13. Amplifier A forward transfer admittance and
phase as a function of frequency;
typical values
V
DS(A)
= 5 V; V
G2-S
= 4 V; V
DS(B)
= V
G1-S(B)
= 0 V;
I
D(A)
= 19 mA; T
j
= 25
°
C.
Fig 14. Amplifier A reverse transfer admittance and
phase as a function of frequency;
typical values
gain reduction (dB)
0
50
40
20
30
10
001aal557
20
10
30
40
I
D
(mA)
0
001aal558
f (MHz)
10
10
3
10
2
10
1
1
10
10
2
g
is
, b
is
(mS)
10
2
g
is
b
is
f (MHz)
10
10
3
10
2
001aal559
10
10
2
|y
fs
|
(mS)
1
10
10
2
fs
(deg)
1
|y
fs
|
fs
001aal560
10
2
10
10
3
|y
rs
|
(mS)
1
10
2
10
10
3
rs
(deg)
1
f (MHz)
10
10
3
10
2
|y
rs
|
rs
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