参数资料
型号: BF556C
厂商: NXP Semiconductors N.V.
元件分类: JFETs
英文描述: N-channel FET
封装: BF556C<SOT23 (SOT23)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;
文件页数: 11/14页
文件大小: 118K
代理商: BF556C
BF556A_BF556B_BF556C
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 4 — 15 September 2011
11 of 14
NXP Semiconductors
BF556A; BF556B; BF556C
N-channel silicon junction field-effect transistors
10. Revision history
Table 9.
Document ID
BF556A_BF556B_BF556C v.4
Modifications:
Revision history
Release date
20110915
The format of this data sheet has been redesigned to comply with the new identity
guidelines of NXP Semiconductors.
Legal texts have been adapted to the new company name where appropriate.
Package outline drawings have been updated to the latest version.
20040805
Product data sheet
-
Data sheet status
Product data sheet
Change notice
-
Supersedes
BF556A_BF556B_BF556C v.3
BF556A_BF556B_BF556C v.3
(9397 750 13393)
BF556A-B-C v.2
BF556A-B-C v.2
19960729
Product data sheet
-
-
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相关代理商/技术参数
参数描述
BF556C T/R 功能描述:射频JFET晶体管 TAPE7 FET-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS(最大值/最小值): 电阻汲极/源极 RDS(导通): 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流(Vgs=0 时的 Idss):25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel
BF556C,215 功能描述:射频JFET晶体管 TAPE7 FET-RFSS RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS(最大值/最小值): 电阻汲极/源极 RDS(导通): 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流(Vgs=0 时的 Idss):25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel
BF562 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:npn silicon rf transistor
BF568 制造商:INFINEON 制造商全称:Infineon Technologies AG 功能描述:PNP SILICON PLANAR TRANSISTOR
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