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参数资料
| 型号： | BF861AT/R |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 小信号晶体管 |
| 英文描述： | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
| 封装： | PLASTIC PACKAGE-3 |
| 文件页数： | 1/13页 |
| 文件大小： | 73K |
| 代理商： | BF861AT/R |
1.
Product prole
1.1 General description
N-channel symmetrical junction eld effect transistors in a SOT23 package.
1.2 Features
1.3 Applications
s Preampliers for AM tuners in car radios.
1.4 Quick reference data
BF861A; BF861B; BF861C
N-channel junction FETs
Rev. 04 — 24 September 2004
Product data sheet
CAUTION
The device is supplied in an antistatic package. The gate-source input must be protected against
static discharge during transport or handling.
MSC895
s High transfer admittance
s Low input capacitance
s Low feedback capacitance
s Low noise.
Table 1:
Quick reference data
Symbol
Parameter
Conditions
Min
Typ
Max
Unit
VDS
drain-source voltage
(DC)
--25
V
IDSS
drain current
BF861A
VGS =0V; VDS = 8 V
2
-
6.5
mA
BF861B
VGS =0V; VDS =8V
6
-
15
mA
BF861C
VGS =0V; VDS = 8 V
12
-
25
mA
Ptot
total power dissipation up to Tamb =25 °C
-
250
mW
yfs
forward transfer
admittance;
BF861A
VGS =0V; VDS = 8 V
12
-
20
mS
BF861B
VGS =0V; VDS = 8 V
16
-
25
mS
BF861C
VGS =0V; VDS = 8 V
20
-
30
mS
Ciss
input capacitance
f = 1 MHz
-
10
pF
Crss
reverse transfer
capacitance
f = 1 MHz
-
2.7
pF
相关PDF资料 |
PDF描述 |
|---|---|
| BF861C-T | 25 V, N-CHANNEL, Si, SMALL SIGNAL, JFET, TO-236AB |
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| BFCN-7500+ | 7500 MHz, CERAMIC BPF |
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BF861B | 制造商:PHILIPS-SEMI 功能描述: |
| BF861B,215 | 功能描述:射频JFET晶体管 JFET N-CH 25V 10MA RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| BF861B,215-CUT TAPE | 制造商:NXP 功能描述:BF861 Series 25 V 6.5 mA 250 mW N-channel Junction FET - SOT-23 |
| BF861B,235 | 功能描述:射频JFET晶体管 N-Channel Single ’+/- 25V 15mA RoHS:否 制造商:NXP Semiconductors 配置:Single 晶体管极性:N-Channel 正向跨导 gFS（最大值/最小值）: 电阻汲极/源极 RDS（导通）: 漏源电压 VDS:40 V 闸/源截止电压:5 V 闸/源击穿电压:40 V 最大漏极/栅极电压:40 V 漏极电流（Vgs=0 时的 Idss）:25 mA to 75 mA 漏极连续电流: 功率耗散:250 mW 最大工作温度:+ 150 C 安装风格:SMD/SMT 封装 / 箱体:SOT-23 封装:Reel |
| BF861B215 | 制造商:NXP Semiconductors 功能描述:RF JFET N CH 25V 15MA 3-SO 制造商:NXP Semiconductors 功能描述:JET N CH 25V SOT-23 |
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