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参数资料
| 型号： | BFR540 |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 功率晶体管 |
| 英文描述： | NPN 9 GHz wideband transistor |
| 封装： | BFR540<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,;BFR540<SOT23 (TO-236AB)|<<http://www.nxp.com/packages/SOT23.html<1<week 34, 2003,; |
| 文件页数： | 3/14页 |
| 文件大小： | 147K |
| 代理商： | BFR540 |
BFR540
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 6 — 13 September 2011
3 of 14
NXP Semiconductors
BFR540
NPN 9 GHz wideband transistor
5. Limiting values
Table 5.
In accordance with the Absolute Maximum Rating System (IEC 60134).
Symbol
Parameter
V
CBO
collector-base voltage
V
CES
collector-emitter voltage
V
EBO
emitter-base voltage
I
C
collector current (DC)
P
tot
total power dissipation
T
stg
storage temperature
T
j
junction temperature
[1]
T
sp
is the temperature at the soldering point of the collector tab.
6. Thermal characteristics
Table 6.
Symbol
R
th(j-sp)
[1]
T
sp
is the temperature at the soldering point of the collector tab.
7. Characteristics
Table 7.
T
j
= 25
C unless otherwise specified.
Symbol Parameter
I
CBO
collector cut-off
current
h
FE
DC current gain
C
e
emitter
capacitance
C
c
collector
capacitance
C
re
feedback
capacitance
f
T
transition
frequency
G
UM
maximum
unilateral power
gain
Limiting values
Conditions
open emitter
R
BE
= 0
open collector
Min
-
-
-
-
Max
20
15
2.5
120
500
+150
175
Unit
V
V
V
mA
mW
C
C
T
sp
70
C
[1]
-
65
-
Thermal characteristics
Parameter
thermal resistance from junction to soldering point
Conditions
Typ
Unit
K/W
[1]
260
Characteristics
Conditions
I
E
= 0 A; V
CB
= 8 V
Min
-
Typ
-
Max
50
Unit
nA
I
C
= 40 mA; V
CE
= 8 V
I
C
= i
c
= 0 A; V
EB
= 0.5 V;
f = 1 MHz
I
E
= i
e
= 0 A; V
CB
= 8 V;
f = 1 MHz
I
C
= 0 A; V
CB
= 8 V;
f = 1 MHz
I
C
= 40 mA; V
CE
= 8 V;
f = 1 GHz
I
C
= 40 mA; V
CE
= 8 V;
T
amb
= 25
C
f = 900 MHz
f = 2 GHz
I
C
= 40 mA; V
CE
= 8 V;
T
amb
= 25
C; f = 900 MHz
100
-
120
2
250
-
pF
-
0.9
-
pF
-
0.6
-
pF
-
9
-
GHz
[1]
-
-
12
14
7
13
-
-
-
dB
dB
dB
s
21
2
insertion power
gain
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