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| 型号： | BFU790F |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 晶体管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 封装： | BFU790F<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件页数： | 4/12页 |
| 文件大小： | 121K |
| 代理商： | BFU790F |
BFU790F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 April 2011
4 of 12
NXP Semiconductors
BFU790F
NPN wideband silicon germanium RF transistor
7. Characteristics
[1]
G
p(max)
is the maximum power gain, if K > 1. If K < 1 then G
p(max)
= MSG.
Table 7.
T
j
= 25
°
C unless otherwise specified
Symbol
Parameter
V
(BR)CBO
collector-base breakdown voltage
V
(BR)CEO
collector-emitter breakdown voltage I
C
= 1 mA; I
B
= 0 mA
I
C
collector current
I
CBO
collector-base cut-off current
h
FE
DC current gain
C
CES
collector-emitter capacitance
C
EBS
emitter-base capacitance
C
CBS
collector-base capacitance
f
T
transition frequency
Characteristics
Conditions
I
C
= 2.5
μ
A; I
E
= 0 mA
Min Typ
10
2.8
-
-
235 410
-
-
-
-
Max Unit
-
-
100
100
585
-
-
-
50
-
V
V
mA
nA
I
E
= 0 mA; V
CB
= 4.5 V
I
C
= 10 mA; V
CE
= 2 V
V
CB
= 2 V; f = 1 MHz
V
EB
= 0.5 V; f = 1 MHz
V
CB
= 2 V; f = 1 MHz
I
C
= 100 mA; V
CE
= 1 V; f = 2 GHz;
T
amb
= 25
°
C
I
C
= 85 mA; V
CE
= 1 V; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
I
C
= 85 mA; V
CE
= 1 V; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
I
C
= 20 mA; V
CE
= 2 V;
Γ
S
=
Γ
opt
; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
I
C
= 20 mA; V
CE
= 2 V;
Γ
S
=
Γ
opt
; T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
I
C
= 60 mA; V
CE
= 2.5 V; Z
S
= Z
L
= 50
Ω
;
T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
I
C
= 30 mA; V
CE
= 2.5 V; Z
S
= Z
L
= 50
Ω
;
T
amb
= 25
°
C
f = 1.5 GHz
f = 1.8 GHz
f = 2.4 GHz
f = 5.8 GHz
527
2817 -
514
25
fF
fF
fF
GHz
-
-
G
p(max)
maximum power gain
[1]
-
-
-
21
19.5
16.5
-
-
-
dB
dB
dB
|
s
21
|
2
insertion power gain
-
-
-
14.5
13
10.5
-
-
-
dB
dB
dB
NF
noise figure
-
-
-
0.40
0.40
0.50
-
-
-
dB
dB
dB
G
ass
associated gain
-
-
-
19
17.5
15.7
-
-
-
dB
dB
dB
P
L(1dB)
output power at 1 dB gain
compression
-
-
-
20
20
19
-
-
-
dBm
dBm
dBm
IP3
third-order intercept point
-
-
-
-
33
33
34
33
-
-
-
-
dBm
dBm
dBm
dBm
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