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参数资料
| 型号： | BFU790F |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 晶体管 |
| 英文描述： | NPN wideband silicon germanium RF transistor |
| 封装： | BFU790F<SOT343F (SOT343F)|<<http://www.nxp.com/packages/SOT343F.html<1<Always Pb-free,; |
| 文件页数： | 7/12页 |
| 文件大小： | 121K |
| 代理商： | BFU790F |
BFU790F
All information provided in this document is subject to legal disclaimers.
NXP B.V. 2011. All rights reserved.
Product data sheet
Rev. 1 — 22 April 2011
7 of 12
NXP Semiconductors
BFU790F
NPN wideband silicon germanium RF transistor
V
CE
= 1 V; I
C
= 20 mA; T
amb
= 25
°
C.
Gain as a function of frequency; typical values
V
CE
= 1 V; I
C
= 85 mA; T
amb
= 25
°
C.
Gain as a function of frequency; typical values
Fig 7.
Fig 8.
V
CE
= 2 V; T
amb
= 25
°
C.
(1) f = 2.4 GHz
(2) f = 1.8 GHz
(3) f = 1.5 GHz
I
C
= 20 mA; V
CE
= 2 V; T
amb
= 25
°
C.
Fig 9.
Minimum noise figure as a function of
collector current; typical values
Fig 10. Minimum noise figure as a function of
frequency; typical values
f (GHz)
0
10
8
4
6
2
001aam878
20
10
30
40
G
(dB)
0
MSG
G
p(max)
IS21I
2
f (GHz)
0
10
8
4
6
2
001aam879
20
10
30
40
G
(dB)
0
MSG
G
p(max)
IS21I
2
I
C
(mA)
0
40
30
10
20
001aam880
0.4
0.6
0.2
0.8
1.0
NF
min
(dB)
0
(1)
(2)
(3)
001aam881
f (GHz)
0
3
2
1
0.4
0.6
0.2
0.8
1.0
NF
min
(dB)
0
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