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参数资料
| 型号： | BPW96C |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光敏三极管 |
| 英文描述： | Phototransistor IR Chip Silicon 850nm 2-Pin T-1 3/4 Bulk |
| 中文描述： | Photodetector Transistors NPN Phototransistor 70V 150mW 850nm |
| 文件页数： | 2/5页 |
| 文件大小： | 104K |
| 代理商： | BPW96C |
BPW96B, BPW96C
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 23-Aug-11
2
Document Number: 81532
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 1 - Power Dissipation Limit vs. Ambient Temperature
0
40
80
120
160
200
P
V
-
Po
w
er
Dissipation
(mW)
Tamb - Ambient Temperature (°C)
100
80
60
40
20
0
94 8300
RthJA
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
PARAMETER
TEST CONDITION
SYMBOL
MIN.
TYP.
MAX.
UNIT
Collector emitter breakdown voltage
IC = 1 mA
V(BR)CEO
70
V
Collector emitter dark current
VCE = 20 V, E = 0
ICEO
1
200
nA
Collector emitter capacitance
VCE = 5 V, f = 1 MHz, E = 0
CCEO
3pF
Angle of half sensitivity
± 20
deg
Wavelength of peak sensitivity
λp
850
nm
Range of spectral bandwidth
λ0.1
450 to 1080
nm
Collector emitter saturation voltage
Ee = 1 mW/cm2,
λ = 950 nm,
IC = 0.1 mA
VCEsat
0.3
V
Turn-on time
VS = 5 V, IC = 5 mA, RL = 100
Ω
ton
2.0
μs
Turn-off time
VS = 5 V, IC = 5 mA, RL = 100
Ω
toff
2.3
μs
Cut-off frequency
VS = 5 V, IC = 5 mA, RL = 100
Ω
fc
180
kHz
TYPE DEDICATED CHARACTERISTICS
PARAMETER
TEST CONDITION
PART
SYMBOL
MIN.
TYP.
MAX.
UNIT
Collector light current
Ee = 1 mW/cm2,
λ = 950 nm,
VCE = 5 V
BPW96B
Ica
2.5
4.5
7.5
mA
BPW96C
Ica
4.5
8
15
mA
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