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参数资料
| 型号： | BPW96C |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光敏三极管 |
| 英文描述： | Phototransistor IR Chip Silicon 850nm 2-Pin T-1 3/4 Bulk |
| 中文描述： | Photodetector Transistors NPN Phototransistor 70V 150mW 850nm |
| 文件页数： | 3/5页 |
| 文件大小： | 104K |
| 代理商： | BPW96C |
BPW96B, BPW96C
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 23-Aug-11
3
Document Number: 81532
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
BASIC CHARACTERISTICS (Tamb = 25 °C, unless otherwise specified)
Fig. 1 - Collector Dark Current vs. Ambient Temperature
Fig. 2 - Relative Collector Current vs. Ambient Temperature
Fig. 3 - Collector Light Current vs. Irradiance
Fig. 4 - Collector Light Current vs. Collector Emitter Voltage
Fig. 5 - Collector Emitter Capacitance vs. Collector Emitter Voltage
Fig. 6 - Turn-on/Turn-off Time vs. Collector Current
20
100
40
60
80
10
101
102
103
104
VCE = 20 V
Tamb - Ambient Temperature (°C)
I CEO
-
Collector
Dark
C
u
rrent
(nA)
94 8304
0
0.6
0.8
1.0
1.2
1.4
2.0
20
40
60
80
100
1.6
1.8
λ
94 8239
Tamb - Ambient Temperature (°C)
I ca
rel
-
Relati
v
e
Collector
C
u
rrent
V
CE = 5 V
E
e = 1 mW/cm
2
= 950 nm
0.01
0.1
1
0.01
0.1
1
10
94 8296
VCE =5V
λ = 950 nm
BPW96B
BPW96C
Ee - Irradiance (mW/cm2)
I
-
Collector
L
ight
C
u
rrent
(mA)
ca
0.1
1
10
0.1
1
10
I
-
Collector
L
ight
C
u
rrent
(mA)
ca
VCE - Collector Emitter Voltage (V)
100
94 8297
BPW96B
E
e = 1 mW/cm
0.5 mW/cm
0.1 mW/cm
0.2 mW/cm
0.05 mW/cm
λ =950 nm
0.1
1
10
0
2
4
6
8
10
VCE - Collector Emitter Voltage (V)
100
94 8301
C
-
Collector
E
mitter
Capacitance
(pF)
CEO
f = 1 MHz
0
2
4
6
8
10
12
14
2
8
6
4
V
CE = 5 V
R
L = 100 Ω
λ = 950 nm
t
off
t
on
IC - Collector Current (mA)
t on
/t
off
-
T
u
rn-on/T
u
rn-off
Time
(s)
94 8293
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