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| 型号： | BPW96C |
| 厂商： | VISHAY SEMICONDUCTORS |
| 元件分类： | 光敏三极管 |
| 英文描述： | Phototransistor IR Chip Silicon 850nm 2-Pin T-1 3/4 Bulk |
| 中文描述： | Photodetector Transistors NPN Phototransistor 70V 150mW 850nm |
| 文件页数： | 4/5页 |
| 文件大小： | 104K |
| 代理商： | BPW96C |
BPW96B, BPW96C
www.vishay.com
Vishay Semiconductors
Rev. 1.8, 23-Aug-11
4
Document Number: 81532
For technical questions, contact: detectortechsupport@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
Fig. 7 - Relative Spectral Sensitivity vs. Wavelength
Fig. 8 - Relative Radiant Sensitivity vs. Angular Displacement
PACKAGE DIMENSIONS in millimeters
400
600
1000
0
0.2
0.4
0.6
0.8
1.0
S
(
λ
) rel
-
Relati
v
e
Spectral
Sensiti
v
ity
λ - Wavelength (nm)
94 8348
800
0.4
0.2
0
94 8299
0.6
0.9
0.8
0°
30°
10°
20°
40°
50°
60°
70°
80°
0.7
1.0
S
rel
-
Relati
v
e
Radiant
Sensiti
v
ity
-
Ang
u
lar
Displacement
Issue:1; 01.07.96
±
0.15
Drawing-No.: 6.544-5086.01-4
specifications
according to DIN
technical drawings
0.5
Area not plane
±
0.15
±
0.3
8.6
±
0.5
5.75
± 0.15
<
0.7
E
C
1.5
7.6
5
1
0.8
- 0.1
+ 0.2
- 0.1
+ 0.2
±
0.3
+ 0.15
- 0.1
+ 0.2
±
0.25
0.63
Chip position
2.54 nom.
12.3
(4.8)
35.3
R 2.
45
(sphere)
96 12192
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