参数资料
| 型号： | BR24S08FVT-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 16/41页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 8KBIT 400KHZ 8TSSOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 8K (1K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-TSSOP-B |
| 包装： | 标准包装 |
| 产品目录页面： | 1379 (CN2011-ZH PDF) |
| 其它名称： | BR24S08FVT-WE2DKR |
第1页第2页第3页第4页第5页第6页第7页第8页第9页第10页第11页第12页第13页第14页第15页当前第16页第17页第18页第19页第20页第21页第22页第23页第24页第25页第26页第27页第28页第29页第30页第31页第32页第33页第34页第35页第36页第37页第38页第39页第40页第41页
BR24L □□ -W Series,BR24S □□□ -W Series
Technical Note
● I/O peripheral circuit
○ Pull up resistance of SDA terminal
SDA is NMOS open drain, so requires pull up resistance. As for this resistance value (R PU ), select an appropriate value to
this resistance value from microcontroller V IL , I L , and V OL -I OL characteristics of this IC. If R PU is large, action frequency is
limited. The smaller the R PU , the larger the consumption current at action.
○ Maximum value of R PU
The maximum value of R PU is determined by the following factors.
(1)SDA rise time to be determined by the capacitance (CBUS) of bus line of R PU and SDA should be tR or below.
And AC timing should be satisfied even when SDA rise time is late.
(2)The bus electric potential A to be determined by input leak total (I L ) of device connected to bus at output of 'H' to
SDA bus and R PU should sufficiently secure the input 'H' level (V IH ) of microcontroller and EEPROM including
recommended noise margin 0.2Vcc.
V CC - I L R PU - 0.2Vcc ≧ V IH
Microcontroller
BR24LXX
R PU ＝
0.8Vcc - V IH
∴
I L
Ex. ) When V CC =3V, I L =10 μ A, V IH =0.7 V CC ,
R PU
A
SDA terminal
from (2)
R PU
≦
0.8 × 3 - 0.7 × 3
10 × 10 -6
IL
IL
Bus line
capacity
≦ 300 [k ? ]
CBUS
Fig.52 I/O circuit diagram
○ Minimum value of R PU
The minimum value of R PU is determined by the following factors.
(1)When IC outputs LOW, it should be satisfied that V OLMAX =0.4V and I OLMAX =3mA.
V CC - V OL
R PU
≦ I OL
∴
R PU ≦
V C - V OL
I OL
(2)V OLMAX =0.4V should secure the input 'L' level (V IL ) of microcontroller and EEPROM including recommended noise margin 0.1Vcc.
V OLMAX ≦ V IL -0.1 V CC
Ex. ) When V CC =3V, V OL =0.4V, I OL =3mA, microcontroller, EEPROM V IL =0.3V CC
from (1)
R PU ≧
≧
3-0.4
3×10 -3
867 [ ? ]
And
V OL = 0.4 [V]
V IL = 0.3×3
= 0.9 [V]
Therefore, the condition (2) is satisfied.
○ Pull up resistance of SCL terminal
When SCL control is made at CMOS output port, there is no need, but in the case there is timing where SCL becomes
'Hi-Z', add a pull up resistance. As for the pull up resistance, one of several k ? ~ several ten k ? is recommended in
consideration of drive performance of output port of microcontroller.
● A0, A1, A2, WP process
○ Process of device address terminals (A0,A1,A2)
Check whether the set device address coincides with device address input sent from the master side or not, and select
one among plural devices connected to a same bus. Connect this terminal to pull up or pull down, or Vcc or GND. And,
pins (N, C, PIN) not used as device address may be set to any of 'H' , 'L', and 'Hi-Z'.
Types with N.C.PIN BR24L16/F/FJ/FV/FVT/FVM/FVJ-W A0, A1, A2
BR24L08/F/FJ/FV/FVT/FVM/FVJ/NUX-W A0, A1
BR24L04/F/FJ/FV/FVT/FVM/FVJ/NUX-W A0
○ Process of WP terminal
WP terminal is the terminal that prohibits and permits write in hardware manner. In 'H' status, only READ is available and
WRITE of all address is prohibited. In the case of 'L', both are available. In the case of use it as an ROM, it is
recommended to connect it to pull up or Vcc. In the case to use both READ and WRITE, control WP terminal or connect
it to pull down or GND.
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
16/40
2009.09 - Rev.D
相关PDF资料 |
PDF描述 |
|---|---|
| RMA50DRMN | CONN EDGECARD 100POS .125 SQ WW |
| RSA50DRMH | CONN EDGECARD 100POS .125 SQ WW |
| RMA50DRMH | CONN EDGECARD 100POS .125 SQ WW |
| RSA50DRMD | CONN EDGECARD 100POS .125 SQ WW |
| RMA50DRMD | CONN EDGECARD 100POS .125 SQ WW |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BR24S08FVT-WTR | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Series EEPROMs I2C BUS |
| BR24S08FV-WE2 | 制造商:ROHM Semiconductor 功能描述:EEPROM SERIAL-I2C 8K-BIT 1K X 8 2.5V/3.3V/5V 8-PIN SSOP-B T/ - Tape and Reel 制造商:ROHM Semiconductor 功能描述:IC EEPROM 8KBIT 400KHZ 8SSOP |
| BR24S08FV-WTR | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Series EEPROMs I2C BUS |
| BR24S08F-WE2 | 功能描述:IC EEPROM 8KBIT 100KHZ SOP8 RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:2,000 系列:- 格式 - 存储器:RAM 存储器类型:SRAM - 异步 存储容量:256K (32K x 8) 速度:15ns 接口:并联 电源电压:3 V ~ 3.6 V 工作温度:-40°C ~ 85°C 封装/外壳:28-TSSOP（0.465"，11.8mm 宽） 供应商设备封装:28-TSOP 包装:带卷 (TR) 其它名称:71V256SA15PZGI8 |
| BR24S08F-WTR | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Series EEPROMs I2C BUS |
发布紧急采购，3分钟左右您将得到回复。