参数资料
| 型号： | BR24S64F-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 34/41页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 64KBIT 100KHZ SOP8 |
| 标准包装： | 2,500 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 64K (8K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-SOP |
| 包装： | 带卷 (TR) |
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BR24L □□ -W Series,BR24S □□□ -W Series
Technical Note
● I/O peripheral circuit
○ Pull up resistance of SDA terminal
SDA is NMOS open drain, so requires pull up resistance. As for this resistance value (R PU ), select an appropriate value to
this resistance value from microcontroller V IL , I L , and V OL -I OL characteristics of this IC. If R PU is large, action frequency is
limited. The smaller the R PU , the larger the consumption current at action.
○ Maximum value of R PU
The maximum value of R PU is determined by the following factors.
(1)SDA rise time to be determined by the capacitance (CBUS) of bus line of R PU and SDA should be tR or below.
And AC timing should be satisfied even when SDA rise time is late.
(2)The bus electric potential A to be determined by input leak total (I L ) of device connected to bus output of 'H' to SDA
bus and R PU should sufficiently secure the input 'H' level (V IH ) of microcontroller and EEPROM including recommended
noise margin 0.2Vcc.
Vcc - I L R PU - 0.2Vcc ≧ V IH
Microcontroller
BR24SXX
∴
R PU
≦
0.8V CC - V IH
I L
Ex.) When Vcc = 3V, I L =10 μ A, V IH = 0.7Vcc
from(2)
10×10
R PU ≦
0.8×3 - 0.7×3
-6
≦ 300 ［ k ? ］
○ Minimum value of R PU
The minimum value of R PU is determined by the following factors.
(1)When IC outputs LOW, it should be satisfied that V OLMAX =0.4V
and I OLMAX =3mA.
Bus line
capacity
CBUS
Fig.49 I/O circuit diagram
V CC - V OL
R PU
≦
I OL
∴
R PU
≧
V CC - V OL
I OL
(2)V OLMAX =0.4V should secure the input 'L' level (V IL ) of microcontroller and EEPROM including recommended noise margin 0.1Vcc.
V OLMAX ≦ V IL -0.1 Vcc
Ex.) When Vcc= 3V, V OL 0.4V, I OL =3mA, microcontroller, EEPROM V IL =0.3Vcc
from(1),
R PU
≧
3 － 0.4
3×10
≧
867
［ ? ］
And
V OL =0.4 ［ V ］
V IL =0.3 × 3
=0.9 ［ V ］
Therefore, the condition (2) is satisfied.
○ Pull up resistance of SCL terminal
When SCL control is made at CMOS output port, there is no need, but in the case there is timing where SCL becomes
'Hi-Z', add a pull up resistance. As for the pull up resistance, one of several k ? ~ several ten k ? is recommended in
consideration of drive performance of output port of microcontroller.
● A0, A1, A2, WP process
○ Process of device address terminals (A0,A1,A2)
Check whether the set device address coincides with device address input sent from the master side or not, and select
one among plural devices connected to a same bus. Connect this terminal to pull up or pull down, or Vcc or GND. And,
pins(Don't use PIN) not used as device address may be set to any of 'H' , 'L', and 'Hi-Z'.
Types with Don't use PIN BR24S08F/FJ/FV/FVT/FVM/FVJ/NUX-W A0, A1
BR24S16F/FJ/FV/FVT/FVM/FVJ/NUX-W A0, A1, A2
○ Process of WP terminal
WP terminal is the terminal that prohibits and permits write in hardware manner. In 'H' status, only READ is available and
WRITE of all address is prohibited. In the case of 'L', both are available. In the case of use it as an ROM, it is
recommended to connect it to pull up or Vcc. In the case to use both READ and WRITE, control WP terminal or connect
it to pull down or GND.
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? 2009 ROHM Co., Ltd. All rights reserved.
34/40
2009.09 - Rev.D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR24S64F-WTR | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Series EEPROMs I2C BUS |
| BR24S64NUX-WE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Series EEPROMs I2C BUS |
| BR24S64NUX-WTR | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Series EEPROMs I2C BUS |
| BR24S64-W | 制造商:ROHM 制造商全称:Rohm 功能描述:I2C BUS Serial EEPROMs |
| BR24SXX-W | 制造商:ROHM 制造商全称:Rohm 功能描述:I2C BUS Serial EEPROMs |
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