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参数资料
| 型号： | BR24T128NUX-WTR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 17/22页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM I2C 128K 400KHZ 8-VSON |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 128K (16K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-UFDFN 裸露焊盘 |
| 供应商设备封装： | VSON008X2030 |
| 包装： | 标准包装 |
| 其它名称： | BR24T128NUX-WDKR |
BR24T □□□□ Series
Technical Note
● Notes on power ON
At power on, in IC internal circuit and set, Vcc rises through unstable low voltage area, and IC inside is not completely reset,
and malfunction may occur. To prevent this, functions of POR circuit and LVCC circuit are equipped. To assure the action,
observe the following conditions at power on.
1. Set SDA = 'H' and SCL ='L' or 'H’
2. Start power source so as to satisfy the recommended conditions of t R , t OFF , and Vbot for operating POR circuit.
V CC
tR
Recommended conditions of tR, tOFF,Vbot
tR
tOFF
Vbot
0
tOFF
Vbot
10ms or below
100msor below
10ms or larger
10msor larger
0.3V or below
0.2V or below
Fig.59
Rise waveform diagram
3. Set SDA and SCL so as not to become 'Hi-Z'.
When the above conditions 1 and 2 cannot be observed, take the following countermeasures.
a) In the case when the above condition 1 cannot be observed. When SDA becomes 'L' at power on .
→ Control SCL and SDA as shown below, to make SCL and SDA, 'H' and 'H'.
V CC
tLOW
SCL
SDA
After Vcc becomes stable
After Vcc becomes stable
tDH
tSU:DAT
tSU:DAT
Fig.60 When SCL= 'H' and SDA= 'L'
Fig.61 When SCL='L' and SDA='L'
b) In the case when the above condition 2 cannot be observed.
→ After power source becomes stable, execute software reset(P12).
c) In the case when the above conditions 1 and 2 cannot be observed.
→ Carry out a), and then carry out b).
● Low voltage malfunction prevention function
LVCC circuit prevents data rewrite action at low power, and prevents wrong write. At LVCC voltage (Typ. =1.2V) or below, it
prevent data rewrite.
● Vcc noise countermeasures
○ Bypass capacitor
When noise or surge gets in the power source line, malfunction may occur, therefore, for removing these, it is
recommended to attach a bypass capacitor (0.1μF) between IC Vcc and GND. At that moment, attach it as close to IC as
possible. And, it is also recommended to attach a bypass capacitor between board Vcc and GND.
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
17/21
2011.03 - Rev.A
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR24T128-W | 制造商:ROHM Semiconductor 功能描述: |
| BR24T16FJ-WE2 | 功能描述:电可擦除可编程只读存储器 Hi-Rel Serial 电可擦除可编程只读存储器 of I2C BUS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR24T16FJWGE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs |
| BR24T16FJWGTR | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs |
| BR24T16FVJFVMWGE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs |
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