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参数资料
| 型号： | BR24T128NUX-WTR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 9/22页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM I2C 128K 400KHZ 8-VSON |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 128K (16K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-UFDFN 裸露焊盘 |
| 供应商设备封装： | VSON008X2030 |
| 包装： | 标准包装 |
| 其它名称： | BR24T128NUX-WDKR |
BR24T □□□□ Series
? During internal write execution, all input commands are ignored, therefore ACK is not sent back.
? Data is written to the address designated by word address (n-th address)
? By issuing stop bit after 8bit data input, write to memory cell inside starts.
? When internal write is started, command is not accepted for tWR (5ms at maximum).
Technical Note
? By page write cycle, the following can be written in bulk :
Up to 8Byte (BR24T01-W, BR24T02-W)
Up to 16Byte (BR24T04-W, BR24T08-W, BR24T16-W)
Up to 32Byte (BR24T32-W, BR24T64-W)
Up to 64Byte (BR24T128-W, BR24T256-W)
Up to 128Byte (BR24T512-W)
Up to 256Byte (BR24T1M-W)
And when data of the maximum bytes or higher is sent, data from the first byte is overwritten.
(Refer to "Internal address increment" of "Notes on page write cycle" in P10.)
? As for page write cycle of BR24T01-W and BR24T02-W, after the significant 4 bits (in the case of BR24T01-W) of word
address, or the significant 5 bits (in the case of BR24T02-W) of word address are designated arbitrarily, by continuing
data input of 2 bytes or more, the address of insignificant 3 bits is incremented internally, and data up to 8 bytes can be
written.
? As for page write command of BR24T04-W, BR24T08-W and BR24T16-W, after page select bit ’P0’(in the case of
BR24T04-W), after page select bit ’P0,P1’(in the case of BR24T08-W), after page select bit ’P0,P1,P2’(in the case of
BR24T16-W) of slave address are designated arbitrarily, by continuing data input of 2 bytes or more, the address of
insignificant 4 bits is incremented internally, and data up to 16 bytes can be written.
? As for page write cycle of BR24T32-W and BR24T64-W, after the significant 7 bits (in the case of BR24T32-W) of word
address, or the significant 8 bits (in the case of BR24T64-W) of word address are designated arbitrarily, by continuing
data input of 2 bytes or more, the address of insignificant 5 bits is incremented internally, and data up to 32 bytes can
be written.
? As for page write cycle of BR24T128-W and BR24T256-W, after the significant 8 bits (in the case of BR24T128-W) of
word address, or the significant 9 bits (in the case of BR24T256-W) of word address are designated arbitrarily, by
continuing data input of 2 bytes or more, the address of insignificant 6 bits is incremented internally, and data up to 64
bytes can be written.
? As for page write cycle of BR24T512-W after the significant 9 bits of word address is designated arbitrarily, by continuing
data input of 2 bytes or more, the address of insignificant 7 bits is incremented internally, and data up to 128 bytes can
be written.
? As for page write cycle of BR24T1M-W after page select bit ’P0’ and the significant 8 bit of word address are designated
arbitrarily, by continuing data input of 2 bytes or more, the address of insignificant 8 bits is incremented internally, and
data up to 256 bytes can be written.
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
9/21
2011.03 - Rev.A
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相关代理商/技术参数 |
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|---|---|
| BR24T128-W | 制造商:ROHM Semiconductor 功能描述: |
| BR24T16FJ-WE2 | 功能描述:电可擦除可编程只读存储器 Hi-Rel Serial 电可擦除可编程只读存储器 of I2C BUS RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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