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参数资料
| 型号： | BR24T128NUX-WTR |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 2/22页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM I2C 128K 400KHZ 8-VSON |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 128K (16K x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-UFDFN 裸露焊盘 |
| 供应商设备封装： | VSON008X2030 |
| 包装： | 标准包装 |
| 其它名称： | BR24T128NUX-WDKR |
BR24T □□□□ Series
● Absolute maximum ratings (Ta=25 ℃ )
Technical Note
● Memory cell characteristics (Ta=25 ℃ , Vcc=1.7 ～
5.5V)
Parameter
Symbol
Ratings
Unit
Parameter
Limits
Min. Typ. Max
Unit
Impressed voltage
V CC
-0.3 ～ +6.5
450 (SOP8) *1
V
Number of data
rewrite times *1
1,000,000
－
－
Times
310 (TSSOP-B8J)
Permissible
dissipation
Pd
450 (SOP-J8) *2
300 (SSOP-B8) *3
330 (TSSOP-B8) *4
*5
mW
Data hold years *1
*1Not 100% TESTED
40
－
－
Years
310 (MSOP8) *6
300 (VSON008X2030) *7
800 (DIP-T8) *8
● Recommended operating conditions
-0.3 ～ Vcc+1.0
Storage
temperature range
Action
temperature range
Terminal voltage
Junction
temperature *10
Tstg
Topr
‐
Tjmax
－ 65 ～ +150
－ 40 ～ +85
150
*9
℃
℃
V
℃
Parameter
Power source
voltage
Input voltage
Symbol
Vcc
V IN
Ratings
1.7 ～ 5.5
0 ～ Vcc
Unit
V
*1,*2
*3,*7
*4
*5, *6
*8
*9
*10
When using at Ta=25 ℃ or higher 4.5mW to be reduced per 1 ℃ .
When using at Ta=25 ℃ or higher 3.0mW to be reduced per 1 ℃ .
When using at Ta=25 ℃ or higher 3.3mW to be reduced per 1 ℃ .
When using at Ta=25 ℃ or higher 3.1mW to be reduced per 1 ℃ .
When using at Ta=25 ℃ or higher 8.1mW to be reduced per 1 ℃ .
The Max value of Terminal Voltage is not over 6.5V.
When the pulse width is 50ns or less, the Min value of
Terminal Voltage is not under -1.0V. (BR24T16/32/64/128/256/512/1M-W)
the Min value of Terminal Voltage is not under -0.8V. (BR24T01/02/04/08-W)
Junction temperature at the storage condition.
● Electrical characteristics (Unless otherwise specified, Ta= － 40 ～ +85 ℃ , VCC=1.7 ～ 5.5V)
Parameter Symbol
Limits
Min. Typ. Max.
Unit
Conditions
-0.3
“H” input voltage 1
“L” input voltage 1
V IH1
V IL1
0.7Vcc
*2
－
－
Vcc+1.0
0.3Vcc
V
V
“L” output voltage 1
“L” output voltage 2
Input leak current
Output leak current
V OL1
V OL2
I LI
I LO
－
－
－ 1
－ 1
－
－
－
－
0.4
0.2
1
1
V
V
μA
μA
I OL =3.0mA, 2.5V ≦ Vcc ≦ 5.5V (SDA)
I OL =0.7mA, 1.7V ≦ Vcc ＜ 2.5V (SDA)
V IN =0 ～ Vcc
V OUT =0 ～ Vcc (SDA)
Vcc=5.5V,f SCL =400kHz, t WR =5ms,
－
－
2.0
Byte write, Page write
BR24T01/02/04/08/16/32/64-W
I CC1
－
－
2.5
mA
Vcc=5.5V,f SCL =400kHz, t WR =5ms,
Byte write, Page write
BR24T128/256-W
Current consumption
at action
－
－
4.5
Vcc=5.5V,f SCL =400kHz, t WR =5ms,
Byte write, Page write
BR24T512/1M-W
Vcc=5.5V,f SCL =400kHz
I CC2
－
－
－
－
0.5
2.0
mA
Random read, current read, sequential read
BR24T01/02/04/08/16/32/64/128/256-W
Vcc=5.5V,f SCL =400kHz
Random read, current read, sequential read
BR24T512/1M-W
Vcc=5.5V, SDA ? SCL=Vcc
－
－
2.0
A0,A1,A2=GND,WP=GND
Standby current
I SB
μA
BR24T01/02/04/08/16/32/64/128/256-W
Vcc=5.5V, SDA ? SCL=Vcc
－
－
3.0
A0, A1, A2=GND, WP=GND
BR24T512/1M-W
○ Radiation resistance design is not made.
*1 BR24T512/1M-W is a target value because it is developing.
*2 When the pulse width is 50ns or less, it is -1.0V. (BR24T16/32/64/128/256/512/1M-W)
When the pulse width is 50ns or less, it is -0.8V. (BR24T01/02/04/08-W)
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
2/21
2011.03 - Rev.A
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