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参数资料
| 型号： | BR25L010F-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 2/17页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM SER 1KB SPI BUS 8SOIC |
| 标准包装： | 3,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1K (128 x 8) |
| 速度： | 5MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W
Technical Note
Absolute maximum ratings (Ta = 25?C)
Recommended action conditions
Parameter
Symbol
Limits
Unit
Parameter
Symbol
Limits
Unit
Impressed voltage
V CC
-0.3 ~ + 6.5
450(SOP8)
*1
V
Power source voltage
Input voltage
V CC
Vin
1.8 ~ 5.5
0 ~ V CC
V
450(SOP-J8)
300(SSOP-B8)
Permissible
dissipation
Pd
*2
*3
330(TSSOP-B8) *4
mW
Memory cell characteristics (Ta=25?C, V CC =1.8 ~ 5.5V)
Limits
Parameter
Min. Typ. Max.
Unit
310(MSOP8)
*5
Number of data rewrite times
*1
1,000,000
–
–
Times
Storage
temperature range
Tstg
310(TSSOP-B8J)
-65 ~ + 125
*6
?C
Data hold years
*1
40
–
–
Years
*1:Not 100% TESTED
Operating
temperature range
Topr
-40 ~ + 85
?C
Input / output capacity (Ta=25?C, frequency=5MHz)
Terminal voltage
–
-0.3 ~ V CC + 0.3
V
Parameter
Symbol Conditions
Min.
Max.
Unit
When using at Ta = 25?C or higher, 4.5mW (*1, *2), 3.0mW (*3),
3.3mW(*4), 3.1mW (*5, *6) to be reduced per 1?C
Input capacity *1
Output capacity *1
C IN
C OUT
V IN =GND
V OUT =GND
–
–
8
8
pF
pF
*1:Not 100% TESTED
Electrical characteristics (Unless otherwise specified, Ta = – 40 ~ +85?C, V CC = 1.8 ~ 5.5V)
Parameter
"H" input voltage 1
"L" input voltage 1
"L" output voltage 1
"L" output voltage 2
"H" output voltage 1
"H" output voltage 2
Input leak current
Output leak current
Symbol
VIH1
VIL1
VOL1
VOL2
VOH1
VOH2
ILI
ILO
Min.
0.7x
V CC
-0.3
0
0
V CC
-0.5
V CC
-0.2
-1
-1
Limits
Typ.
–
–
–
–
–
–
–
–
Max.
V CC
+0.3
0.3x
V CC
0.4
0.2
V CC
V CC
1
1
Unit
V
V
V
V
V
V
μ A
μ A
Conditions
1.8 ≤ V CC ≤ 5.5V
1.8 ≤ V CC ≤ 5.5V
IOL=2.1mA(V CC =2.5V ~ 5.5V)
IOL=150 μ A(V CC =1.8V ~ 2.5V)
IOH=-0.4mA(V CC =2.5V ~ 5.5V)
IOH=-100 μ A(V CC =1.8V ~ 2.5V)
V IN =0 ~ V CC
V OUT =0 ~ V CC ,CS=V CC
V CC =1.8V,fSCK=2MHz,tE/W=5ms
I CC 1
–
–
1.0
mA
Byte write
Page write
Write status register
V CC =2.5V,fSCK=5MHz,tE/W=5ms
Current consumption at write
action
I CC 2
–
–
2.0
mA
Byte write
Page write
Write status register
V CC =5.5V,fSCK=5MHz,tE/W=5ms
I CC 3
–
–
3.0
mA
Byte write
Page write
Write status register
V CC =2.5V,fSCK=5MHz
I CC 4
–
–
1.5
mA
Read
Current consumption at read
action
Read status register
V CC =5.5V,fSCK=5MHz
I CC 5
–
–
2.0
mA
Read
Read status register
Standby current
ISB
–
–
2
μ A
V CC =5.5V
CS=HOLD=WP=V CC ,SCK=SI=V CC or =GND,SO=OPEN
? Radiation resistance design is not made.
Block diagram
CS
INSTRUCTION DECODE
CONTROL CLOCK
VOLTAGE
DETECTION
SCK
SI
GENERATION
INSTRUCTION
REGISTER
WRITE
INHIBITION
HIGH VOLTAGE
GENERATOR
STATUS REGISTER
HOLD
WP
ADDRESS
REGISTER
DATA
REGISTER
7~13bit *1
8bit
ADDRESS
DECODER
READ/WRITE
AMP
7~13bit *1
8bit
1K~64K
EEPROM
*1 7bit : BR25L010-W
8bit : BR25L020-W
9bit : BR25L040-W
10bit : BR25L080-W
11bit : BR25L160-W
12bit : BR25L320-W
13bit : BR25L640-W
SO
Fig.1 Block diagram
www.rohm.com
? 2010 ROHM Co., Ltd. All rights reserved.
2/16
2010.07 - Rev. B
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| BR25L010-W_08 | 制造商:ROHM 制造商全称:Rohm 功能描述:SPI BUS Serial EEPROMs |
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| BR25L020FJ-WE2 | 功能描述:电可擦除可编程只读存储器 SPI 256X8 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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