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参数资料
| 型号： | BR25L010F-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 8/17页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM SER 1KB SPI BUS 8SOIC |
| 标准包装： | 3,000 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 1K (128 x 8) |
| 速度： | 5MHz |
| 接口： | SPI 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-SOIC（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-MSOP |
| 包装： | 带卷 (TR) |
BR25L010-W, BR25L020-W, BR25L040-W, BR25L080-W, BR25L160-W, BR25L320-W, BR25L640-W
2. Read command (READ)
CS
Technical Note
Product
Address
SCK
0
1
2
3
4
5
6
7
8
9
10
11
14
15
16
17
22
number
length
BR25L010-W
A6-A0
SI
0
0
0
0
*1
0
1
1
A7
A6
A5
A4
A1
A0
BR25L020-W
A7-A0
SO
High-Z
D7
D6
D2
D1
D0
BR25L040-W
A8-A0
Fig. 37 Read command (BR25L010/020/040-W) * 1 BR25L010/020-W=Don't care
BR25L040-W=A8
CS
Product
Address
SCK
0
1
2
3
4
5
6
7
8
23
24
30
number
length
SI
0
0
0
0
0
0
1
1
*
*
*
A12
A1
A0
BR25L080-W
A9-A0
BR25L160-W
A10-A0
SO
High-Z
D7
D6
D2
D1
D0
BR25L320-W
A11-A0
Fig. 38 Read command (BR25L080/160/320/640-W)
* =Don't care
BR25L640-W
A12-A0
By read command, data of EEPROM can be read. As for this command, set CS LOW, then input address after read ope
code. EEPROM starts data output of the designated address. Data output is started from SCK fall of 15/23 *1 clock, and
from D7 to D0 sequentially. This IC has increment read function. After output of data for 1 byte (8 bits), by continuing input
of SCK, data of the next address can be read. Increment read can read all the addresses of EEPROM. After reading data
of the most significant address, by continuing increment read, data of the most insignificant address is read.
* =Don't care
* 1 BR25L010/020/040-W=15 clocks
BR25L080/160/320/640-W=23 clocks
3. Write command (WRITE)
CS
Product
number
Address
length
SCK
0
1
2
3
4
5
6
7
8
15
16
22
23
BR25L010-W
A6-A0
BR25L020-W
A7-A0
SI
0
0
0
0
*1
0
1
0
A7
A6
A5
A4
A1
A0
D7
D6
D2
D1
D0
BR25L040-W
A8-A0
SO
High-Z
Fig.39 Write command (BR25L010/020/040-W)
* 1 BR25L010/020-W=Don't care
BR25L040-W=A8
CS
Product
number
Address
length
SCK
0
1
2
3
4
5
6
7
8
23
24
30
31
BR25L080-W
A9-A0
SI
0
0
0
0
0
0
1
0
*
*
*
A12
A1
A0
D7
D6
D2
D1
D0
BR25L160-W
A10-A0
SO
High-Z
BR25L320-W
A11-A0
Fig.40 Write command (BR25L080/160/320/640-W)
* =Don't care
BR25L640-W
A12-A0
By write command, data of EEPROM c an be written. As for this command, set CS LOW, then input address and data
after write ope code. Then, by making CS HIGH, the EEPROM starts writing. The write time of EEPROM requires time of
tE/W (Max 5ms). During tE/W, other than status read command is not accepted. Start CS after taking the last data (D0),
and before the next SCL clock starts. At other timing, write command is not executed, and this write command is
cancelled. This IC has page write function, and after input of data for 1 byte (8 bits), by continuing data input without
starting CS, data up to 16/32 *1 bytes can be written for one tE/W. In page write, the insignificant 4/5 *2 bit of the
designated address is incremented internally at every time when data of 1 byte is input, and data is written to respective
addresses. When data of the maximum bytes or higher is input, address rolls over, and previously input data is
overwritten.
* 1 BR25L010/020/040-W=16 bytes at maximum
BR25L080/160/320/640-W=32 bytes at maximum
* 2 BR25L010/020/040-W=Insignificant 4 bits
BR25L080/160/320/640-W=Insignificant 5 bits
www.rohm.com
? 2010 ROHM Co., Ltd. All rights reserved.
8/16
2010.07 - Rev. B
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