参数资料
型号: BR25S640FJ-WE2
厂商: Rohm Semiconductor
文件页数: 19/19页
文件大小: 0K
描述: IC EEPROM SPI 64KB 20MHZ 8-SOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 64K (8K x 8)
速度: 20MHz
接口: SPI 3 线串行
电源电压: 1.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP-J
包装: 标准包装
其它名称: BR25S640FJ-WE2DKR
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Notes
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Examples of application circuits, circuit constants and any other information contained herein
illustrate the standard usage and operations of the Products. The peripheral conditions must
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R1010 A
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BR25S640FVJ-WE2 制造商:ROHM Semiconductor 功能描述:EEPROM SERIAL-SPI 64K-BIT 8K X 8 1.8V/2.5V/3.3V/5V 8-PIN TSS - Tape and Reel 制造商:ROHM Semiconductor 功能描述:IC EEPROM 64KBIT 20MHZ 8SOP
BR25S640FVM-WTR 制造商:ROHM Semiconductor 功能描述:EEPROM SERIAL-SPI 64K-BIT 8K X 8 1.8V/2.5V/3.3V/5V 8-PIN MSO - Tape and Reel 制造商:ROHM Semiconductor 功能描述:IC EEPROM 64KBIT 20MHZ 8MSOP 制造商:ROHM Semiconductor 功能描述:SPI 64K BIT 8K X 8 1.8V/2.5V/3.3V/5V
BR25S640FVM-W-TR 制造商:ROHM Semiconductor 功能描述:
BR25S640FVT-WE2 功能描述:IC EEPROM SPI 64KB 20MHZ 8-TSSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 线串行 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOP-J 包装:Digi-Reel® 产品目录页面:1380 (CN2011-ZH PDF) 其它名称:BR93L86FJ-WE2DKR
BR25S640FV-WE2 功能描述:IC EEPROM SPI 64KB 20MHZ 8-SSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 线串行 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOP-J 包装:Digi-Reel® 产品目录页面:1380 (CN2011-ZH PDF) 其它名称:BR93L86FJ-WE2DKR