参数资料
型号: BR25S640FJ-WE2
厂商: Rohm Semiconductor
文件页数: 3/19页
文件大小: 0K
描述: IC EEPROM SPI 64KB 20MHZ 8-SOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 64K (8K x 8)
速度: 20MHz
接口: SPI 3 线串行
电源电压: 1.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-SOIC(0.154",3.90mm 宽)
供应商设备封装: 8-SOP-J
包装: 标准包装
其它名称: BR25S640FJ-WE2DKR
BR25S □□□ Series
● Block diagram
Technical Note
CSB
1
INSTRUCTION DECODE
VOLTAGE
DETECTION
8 Vcc
CONTROL CLOCK
GENERATION
WRITE
HIGH VOLTAGE
SO
2
INHIBITION
GENERATOR
7 HOLDB
*1 12bit: BR25S320-W
INSTRUCTION
13bit: BR25S640-W
REGISTER
STATUS REGISTER
14bit: BR25S128-W
WPB
3
ADDRESS
REGISTER
12~15bit * 1
ADDRESS
DECODER
12~15bit * 1
32~256K
6 SCK
15bit: BR25S256-W
EEPROM
GND
4
DATA
REGISTER
8bit
READ/WRITE
AMP
8bit
5 SI
Fig.1 Block diagram
● Operating timing characteristics (Ta=-40 ~ +85°C, unless otherwise specified, load capacity C L =30pF)
Parameter
Symbol
1.7 Vcc<2.5V  1.8 Vcc<2.5V  2.5 Vcc<4.5V  4.5 Vcc<5.5V
Min. Typ. Max. Min. Typ. Max. Min. Typ. Max. Min. Typ. Max.
Unit
SCK frequency
f SCK
- - 3 - - 5 - - 10 - - 20 MHz
SCK high time
t SCKWH 125 - - 80 - - 40 - - 20 - - ns
SCK low time
CSB high time
CSB setup time
CSB hold time
SCK setup time
SCK hold time
SI setup time
SI hold time
Data output delay time
Output hold time
Output disable time
HOLDB setting setup time
HOLDB setting hold time
HOLDB release setup time
HOLDB release hold time
Time from HOLDB to output High-Z
Time from HOLDB to output change
t SCKWL
t CS
t CSS
t CSH
t SCKS
t SCKH
t DIS
t DIH
t PD
t OH
t OZ
t HFS
t HFH
t HRS
t HRH
t HOZ
t HPD
125 - - 80 - - 40 - - 20 - - ns
250 - - 90 - - 40 - - 20 - - ns
100 - - 60 - - 30 - - 15 - - ns
100 - - 60 - - 30 - - 15 - - ns
100 - - 50 - - 20 - - 15 - - ns
100 - - 50 - - 20 - - 15 - - ns
30 - - 20 - - 10 - - 5 - - ns
50 - - 20 - - 10 - - 5 - - ns
- - 125 - - 80 - - 40 - - 20 ns
0 - - 0 - - 0 - - 0 - - ns
- - 200 - - 80 - - 40 - - 20 ns
100 - - 0 - - 0 - - 0 - - ns
100 - - 20 - - 10 - - 5 - - ns
100 - - 0 - - 0 - - 0 - - ns
100 - - 20 - - 10 - - 5 - - ns
- - 100 - - 80 - - 40 - - 20 ns
- - 100 - - 80 - - 40 - - 20 ns
SCK rise time
SCK fall time
*1
*1
t RC
t FC
- - 1 - - 1 - - 1 - - 1
- - 1 - - 1 - - 1 - - 1
μ s
μ s
OUTPUT rise time
OUTPUT fall time
Write time
*1
*1
t RO
t FO
t E/W
- - 100 - - 50 - - 40 - - 20 ns
- - 100 - - 50 - - 40 - - 20 ns
- - 5 - - 5 - - 5 - - 5 ms
*1 NOT 100% TESTED
www.rohm.com
? 2010 ROHM Co., Ltd. All rights reserved.
3/18
2010.12 - Rev.B
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BR25S640FVM-W-TR 制造商:ROHM Semiconductor 功能描述:
BR25S640FVT-WE2 功能描述:IC EEPROM SPI 64KB 20MHZ 8-TSSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 线串行 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOP-J 包装:Digi-Reel® 产品目录页面:1380 (CN2011-ZH PDF) 其它名称:BR93L86FJ-WE2DKR
BR25S640FV-WE2 功能描述:IC EEPROM SPI 64KB 20MHZ 8-SSOP RoHS:是 类别:集成电路 (IC) >> 存储器 系列:- 标准包装:1 系列:- 格式 - 存储器:EEPROMs - 串行 存储器类型:EEPROM 存储容量:16K (1K x 16) 速度:2MHz 接口:Microwire 3 线串行 电源电压:1.8 V ~ 5.5 V 工作温度:-40°C ~ 85°C 封装/外壳:8-SOIC(0.154",3.90mm 宽) 供应商设备封装:8-SOP-J 包装:Digi-Reel® 产品目录页面:1380 (CN2011-ZH PDF) 其它名称:BR93L86FJ-WE2DKR