参数资料
型号: BR34L02FV-WE2
厂商: Rohm Semiconductor
文件页数: 1/18页
文件大小: 0K
描述: IC EEPROM 2KBIT 400KHZ 8SSOP
标准包装: 1
格式 - 存储器: EEPROMs - 串行
存储器类型: EEPROM
存储容量: 2K (256 x 8)
速度: 400kHz
接口: I²C,2 线串口
电源电压: 1.7 V ~ 5.5 V
工作温度: -40°C ~ 85°C
封装/外壳: 8-LSSOP(0.173",4.40mm 宽)
供应商设备封装: 8-SSOPB
包装: 标准包装
产品目录页面: 1379 (CN2011-ZH PDF)
其它名称: BR34L02FV-WE2DKR
Double-cell Memory for Plug & Play
DDR1/DDR2
(For memory module) SPD Memory
BR34L02FV-W
● Description
BR34L02FV-W is 256 × 8 bit Electrically Erasable PROM (Based on Serial Presence Detect)
● Features
1) 256 × 8 bit architecture serial EEPROM
2) Wide operating voltage range: 1.7V-5.5V
3) Two-wire serial interface
4) High reliability connection using Au pads and Au wires
5) Self-Timed Erase and Write Cycle
6) Page Write Function (16byte)
7) Write Protect Mode
Write Protect 1 (Onetime Rom) : 00h-7Fh
Write Protect 2 (Hardwire WP PIN) : 00h-FFh
8) Low Power consumption
Write ( at 5V ) :1.2mA (typ.)
Read ( at 5V ) :0.2mA(typ.)
Standby ( at 5V ) :0.1μA(typ.)
9) DATA security
Write protect feature (WP pin)
Inhibit to WRITE at low V CC
10) Compact package: SSOP-B8
11) High reliability fine pattern CMOS technology
12) Rewriting possible up to 1,000,000 times
13) Data retention: 40 years
14) Noise reduction Filtered inputs in SCL / SDA
15) Initial data FFh at all addresses
● Absolute Maximum Ratings (Ta=25 ℃ )
No.09002EAT04
Parameter Symbol
Rating
Unit
Supply Voltage
Power Dissipation
Storage Temperature
V CC
Pd
Tstg
-0.3 ~ +6.5
300*
-65 ~ +125
V
mW
Operating Temperature Topr
-40 ~ +85
Terminal Voltage
-
-0.3 ~ V CC +0.3
V
* Reduce by 3.0 mW/ ? C over 25 ? C
● Recommended operating conditions
Parameter Symbol
Rating
Unit
Supply Voltage
Input Voltage
V CC
V IN
1.7 ~ 5.5
0 ~ V CC
V
V
● Memory cell characteristics(Ta=25 ℃ , V CC =1.7V ~ 5.5V)
Parameter
Specification
Min. Typ.
Max.
Unit
Write / Erase Cycle
Data Retention
*1
*1
1,000,000
40
-
-
-
-
Cycles
Years
*1:Not 100% TESTED
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
1/17
2009.04 - Rev.A
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