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参数资料
| 型号： | BR34L02FV-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 8/18页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 2KBIT 400KHZ 8SSOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 2K (256 x 8) |
| 速度： | 400kHz |
| 接口： | I²C，2 线串口 |
| 电源电压： | 1.7 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-LSSOP（0.173"，4.40mm 宽） |
| 供应商设备封装： | 8-SSOPB |
| 包装： | 标准包装 |
| 产品目录页面： | 1379 (CN2011-ZH PDF) |
| 其它名称： | BR34L02FV-WE2DKR |
BR34L02FV-W
Technical Note
● Command
○ Write Cycle
During WRITE CYCLE operation data is written in the EEPROM. The Byte Write Cycle is used to write only one byte. In
the case of writing continuous data consisting of more than one byte, Page Write is used. The maximum bytes that can
be written at one time is 16 bytes.
S
W
T
A
R
I
S
T
R
T
SLAVE
ADDRESS
T
E
WORD
ADDRESS
DATA
O
P
SDA
LINE
1 0 1 0 A2 A1 A0
WA
7
WA
0
D7
D0
R A
A
A
/
C
C
C
S
W
W K
K
Fig.34 Byte Write Cycle Timing
K
T
A
R
I
S
T
R
T
S LA V E
ADDRESS
T
E
W ORD
A D D R E S S (n )
D A TA (n)
D A TA (n + 1 5)
O
P
SDA
L IN E
1 0 1 0 A 2 A 1 A 0
WA
7
WA
0
D7
D0
D0
R A
/ C
W K
A
C
K
A
C
K
A
C
K
Fig.35 Page Write Cycle Timing
? With this command the data is programmed into the indicated word address.
? When the Master generates a STOP condition, the device begins the internal write cycle to the nonvolatile memory array.
This device is capable of sixteen-byte Page Write operations.
Once programming is started no commands are accepted for tWR (5ms max.).
If the Master transmits more than sixteen words prior to generating the STOP condition, the address counter will “roll
over” and the previously transmitted data will be overwritten.
When two or more byte of data are input, the four low order address bits are internally incremented by one after the
receipt of each word, while the four higher order bits of the address (WA7 ～ WA4) remain constant.
www.rohm.com
? 2009 ROHM Co., Ltd. All rights reserved.
8/17
2009.04 - Rev.A
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