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参数资料
| 型号： | BR93L76RFVJ-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 17/41页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 8KBIT 2MHZ 8TSSOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 8K (512 x 16) |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-TSSOP-J |
| 包装： | 标准包装 |
| 产品目录页面： | 1380 (CN2011-ZH PDF) |
| 其它名称： | BR93L76RFVJ-WE2DKR |
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BR93L -W Series, 93A □□ -WM Series, BR93H □□ -WC Series
Technical Note
○ Pull up resistance Rpu and pull down resistance Rpd of DO pin
As for pull up and pull down resistance value, select an appropriate value to this resistance value from microcontroller
VIH, VIL, and VOH, IOH, VOL, IOL characteristics of this IC.
Microcontroller
EEPROM
Rpu ≧
Vcc － VOLE
IOLE
???③
VILM
“L” input
Rpu
IOLE
VOLE
“L” output
VOLE ≦ VILM ???④
Example) When V CC =5V , VOLE=0.4V, IOLE=2.1mA, VILM=0.8V,
from the equation ③ ,
5 － 0.4
Rpu ≧ -3
2.1 × 10
∴
Rpu ≧
2.2 [k Ω ]
With the value of Rpu to satisfy the above equation, VOLE becomes 0.4V
or below, and with VILM(=0.8V), the equation ④ is also satisfied.
Fig.77 DO pull up resistance
? VOLE
? IOLE
? VILM
: EEPROM VOL specifications
: EEPROM IOL specifications
: Microcontroller VIL specifications
Microcontroller
EEPROM
Rpd ≧
VOHE ≧
VOHE
IOHE
VIHM
???⑤
???⑥
VIHM
VOHE
Example) When V CC =5V , VOHE=Vcc － 0.2V, IOHE=0.1mA,
VIHM=Vcc × 0.7V from the equation ⑤ ,
0.1 × 10
“H” input
Rpd
IOHE
“H” output
Rpd ≧
5 － 0.2
-3
∴
Rpd ≧
48 [k Ω ]
With the value of Rpd to satisfy the above equation, VOHE becomes 2.4V
Fig.78 DO pull down resistance
or below, and with VIHM (=3.5V), the equation ⑥ is also satisfied.
? VOHE
? IOHE
? VIHM
: EEPROM VOH specifications
: EEPROM IOH specifications
: Microcontroller VIH specifications
5) READY / BUSY status display (DO terminal)
(common to BR93L46-W/A46-WM,BR93L56-W/A56-WM, BR93L66-W/A66-WM, BR93L76-W/A76-WM, BR93L86-W/A86-WM)
This display outputs the internal status signal. When CS is started after tCS (Min.200ns)
from CS fall after write command input, “H” or “L” is output.
R/B display ＝ “L” (BUSY) = write under execution
（ DO status ）
After the timer circuit in the IC works and creates the period of tE/W, this time circuit completes automatically.
And write to the memory cell is made in the period of tE/W, and during this period, other command is not accepted.
R/B display = “H” (READY) = command wait status
（ DO status ） Even after tE/W (max.5ms) from write of the memory cell, the following command is accepted.
Therefore, CS=“H” in the period of tE/W, and when input is in SK, DI, malfunction may occur, therefore, DI=“L” in the area
CS=“H”. (Especially, in the case of shared input port, attention is required.)
*Do not input any command while status signal is output. Command input in BUSY area is cancelled, but command input in READY area is accepted.
Therefore, status READY output is cancelled, and malfunction and mistake write may be made.
CS
SK
DI
CLOCK
WRITE
INSTRUCTION
STATUS
DO
High-Z
t SV
READY
BUSY
Fig.79 R/B status output timing chart
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
17/40
2011.09 - Rev.G
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相关代理商/技术参数 |
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| BR93L76RFVM-W | 制造商:ROHM 制造商全称:Rohm 功能描述:Microwire BUS 8Kbit(512 x 16bit) EEPROM |
| BR93L76RFVM-WE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs High Reliability Series |
| BR93L76RFVM-WTR | 功能描述:电可擦除可编程只读存储器 SRL 512X16 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR93L76RFVT-W | 制造商:ROHM Semiconductor 功能描述:Memory,EEPROM,8kb(X16),Microwire,TSSOP8 |
| BR93L76RFVT-WE2 | 功能描述:电可擦除可编程只读存储器 SRL 8K BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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