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参数资料
| 型号： | BR93L76RFVJ-WE2 |
| 厂商： | Rohm Semiconductor |
| 文件页数： | 18/41页 |
| 文件大小： | 0K |
| 描述： | IC EEPROM 8KBIT 2MHZ 8TSSOP |
| 标准包装： | 1 |
| 格式 - 存储器： | EEPROMs - 串行 |
| 存储器类型： | EEPROM |
| 存储容量： | 8K (512 x 16) |
| 速度： | 2MHz |
| 接口： | Microwire 3 线串行 |
| 电源电压： | 1.8 V ~ 5.5 V |
| 工作温度： | -40°C ~ 85°C |
| 封装/外壳： | 8-TSSOP，8-MSOP（0.118"，3.00mm 宽） |
| 供应商设备封装： | 8-TSSOP-J |
| 包装： | 标准包装 |
| 产品目录页面： | 1380 (CN2011-ZH PDF) |
| 其它名称： | BR93L76RFVJ-WE2DKR |
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BR93L -W Series, 93A □□ -WM Series, BR93H □□ -WC Series
Technical Note
6) When to directly connect DI and DO
This IC has independent input terminal DI and output terminal DO, and separate signals are handled on timing chart,
meanwhile, by inserting a resistance R between these DI and DO terminals, it is possible to carry out control by 1 control line.
Microcontroller
EEPROM
DI/O PORT
DI
R
DO
Fig.80 DI, DO control line common connection
○ Data collision of microcontroller DI/O output and DO output and feedback of DO output to DI input.
Drive from the microcontroller DI/O output to DI input on I/O timing, and signal output from DO output occur at the same
time in the following points.
(1) 1 clock cycle to take in A0 address data at read command
Dummy bit “0” is output to DO terminal.
→ When address data A0 = “1” input, through current route occurs.
EEPROM CS input
EEPROM SK input
“H”
EEPROM DI input
A1
A0
Collision of DI input and DO output
EEPROM DO output
Microcontroller DI/O port
High-Z
A1
A0
0
D15 D14 D13
High-Z
Microcontroller output
Microcontroller input
Fig.81 Collision timing at read data output at DI, DO direct connection
(2) Timing of CS = “H” after write command. DO terminal in READY / BUSY function output.
When the next start bit input is recognized, “HIGH-Z” gets in.
→ Especially, at command input after write, when CS input is started with microcontroller DI/O output “L”,
READY output “H” is output from DO terminal, and through current route occurs.
Feedback input at timing of these (1) and (2) does not cause disorder in basic operations, if resistance R is inserted.
～ ～
EEPROM CS input
EEPROM SK input
EEPROM DI input
Write command
Write command
Write command
～ ～
～ ～
～ ～
～ ～
～ ～
BUSY
EEPROM DO output
Write command
～ ～
READY
～ ～
READY
High-Z
Collision of DI input and DO output
Microcontroller DI/O port
Write command
BUSY
～ ～
READY
～ ～
Microcontroller output
Microcontroller input
Microcontroller output
Fig.82 Collision timing at DI, DO direct connection
Note) As for the case (2), attention must be paid to the following.
When status READY is output, DO and DI are shared, DI=”H” and the microcontroller DI/O=”High-Z” or the microcontroller DI/O=”H”,if SK clock is
input, DO output is input to DI and is recognized as a start bit, and malfunction may occur. As a method to avoid malfunction, at status READY
output, set SK=“L”, or start CS within 4 clocks after “H” of READY signal is output.
CS
SK
Start bit
Because DI=”H”, set
SK=”L” at CS rise.
DI
READY
DO
High-Z
Fig.83 Start bit input timing at DI, DO direct connection
www.rohm.com
? 2011 ROHM Co., Ltd. All rights reserved.
18/40
2011.09 - Rev.G
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BR93L76RFVM-W | 制造商:ROHM 制造商全称:Rohm 功能描述:Microwire BUS 8Kbit(512 x 16bit) EEPROM |
| BR93L76RFVM-WE2 | 制造商:ROHM 制造商全称:Rohm 功能描述:High Reliability Serial EEPROMs High Reliability Series |
| BR93L76RFVM-WTR | 功能描述:电可擦除可编程只读存储器 SRL 512X16 BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
| BR93L76RFVT-W | 制造商:ROHM Semiconductor 功能描述:Memory,EEPROM,8kb(X16),Microwire,TSSOP8 |
| BR93L76RFVT-WE2 | 功能描述:电可擦除可编程只读存储器 SRL 8K BIT RoHS:否 制造商:Atmel 存储容量:2 Kbit 组织:256 B x 8 数据保留:100 yr 最大时钟频率:1000 KHz 最大工作电流:6 uA 工作电源电压:1.7 V to 5.5 V 最大工作温度:+ 85 C 安装风格:SMD/SMT 封装 / 箱体:SOIC-8 |
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