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参数资料
| 型号： | BS62UV256JI |
| 厂商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit |
| 中文描述： | 超低功率/电压CMOS SRAM的32K的× 8位 |
| 文件页数： | 5/11页 |
| 文件大小： | 331K |
| 代理商： | BS62UV256JI |
Revision 2.2
April 2001
3
DC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC )
BSI
BS62UV256
R0201-BS62UV256
SYMBOL
PARAMETER
TEST CONDITIONS
MIN.
TYP. (1)
MAX.
UNITS
VDR
Vcc for Data Retention
CE
Vcc - 0.2V
VIN
Vcc - 0.2V or VIN
0.2V
1.5
--
V
ICCDR
Data Retention Current
CE
Vcc -0.2V
VIN
Vcc - 0.2V or VIN
0.2V
--
0.005
0.1
uA
tCDR
Chip Deselect to Data
Retention Time
0--
--
ns
tR
Operation Recovery Time
See Retention Waveform
TRC (2)
--
ns
DATA RETENTION CHARACTERISTICS ( TA = 0oC to + 70oC )
1. Vcc = 1.5V, TA = + 25OC
2. t
RC = Read Cycle Time
LOW VCC DATA RETENTION WAVEFORM (1) ( CE Controlled )
CE
Data Retention Mode
Vcc
t CDR
Vcc
t R
VIH
Vcc
VDR
1.5V
≥
CE
Vcc - 0.2V
≥
PARAMETER
NAME
PARAMETER
TEST CONDITIONS
MIN. TYP. (1) MAX.
UNITS
Vcc=2.0V
0.6
VIL
Guaranteed Input Low
Voltage(2)
Vcc=3.0V
-0.5
--
0.8
V
Vcc=2.0V
1.4
VIH
Guaranteed Input High
Voltage(2)
Vcc=3.0V
2.0
--
Vcc+0.2
V
IIL
Input Leakage Current
Vcc = Max, VIN = 0V to Vcc
--
1
uA
IOL
Output Leakage Current
Vcc = Max, CE = VIH, or OE = VIH,
VI/O = 0V to Vcc
--
1
uA
Vcc=2.0V
VOL
Output Low Voltage
Vcc = Max, IOL = 1mA
Vcc=3.0V
--
0.4
V
Vcc=2.0V
1.6
VOH
Output High Voltage
Vcc = Min, IOH = -0.5mA
Vcc=3.0V
2.4
--
V
Vcc=2.0V
--
10
ICC
Operating Power Supply
Current
CE = VIL, IDQ = 0mA, F = Fmax(3)
Vcc=3.0V
--
20
mA
Vcc=2.0V
--
0.5
ICCSB
Standby Current-TTL
CE = VIH, IDQ = 0mA
Vcc=3.0V
--
1.0
mA
Vcc=2.0V
--
0.005
0.1
ICCSB1
Standby Current-CMOS
CE
Vcc-0.2V,
VIN
Vcc - 0.2V or VIN
0.2V
Vcc=3.0V
--
0.01
0.2
uA
1. Typical characteristics are at TA = 25oC.
2. These are absolute values with respect to device ground and all overshoots due to system or tester notice are included.
3. Fmax = 1/t
RC .
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