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参数资料
| 型号： | BS62UV256JI |
| 厂商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit |
| 中文描述： | 超低功率/电压CMOS SRAM的32K的× 8位 |
| 文件页数： | 7/11页 |
| 文件大小： | 331K |
| 代理商： | BS62UV256JI |
Revision 2.2
April 2001
5
BSI
BS62UV256
R0201-BS62UV256
SWITCHING WAVEFORMS (READ CYCLE)
READ CYCLE1 (1,2,4)
t RC
t OH
t AA
D
OUT
ADDRESS
t OH
READ CYCLE3 (1,4)
READ CYCLE2 (1,3,4)
NOTES:
1. WE is high in read Cycle.
2. Device is continuously selected when CE = VIL
.
3. Address valid prior to or coincident with CE transition low.
4. OE = VIL
.
5. Transition is measured
500mV from steady state with CL = 5pF as shown in Figure 1B.
The parameter is guaranteed but not 100% tested.
t CLZ
t CHZ
(5)
D
OUT
CE
(5)
t ACS
t OH
t RC
t OE
D
OUT
CE
OE
ADDRESS
t CLZ
(5)
t ACS
t CHZ
(1,5)
t OHZ (5)
t OLZ
t AA
±
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BS-632-1 | 制造商:PennEngineering (PEM) 功能描述: |
| BS6322 | 制造商:n/a 功能描述:Ships in 2 days |
| BS-632-2 | 制造商:PennEngineering (PEM) 功能描述: |
| BS640GBC3V | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| BS640GBC4V | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
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