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参数资料
| 型号： | BS62UV256JI |
| 厂商： | BRILLIANCE SEMICONDUCTOR, INC. |
| 英文描述： | Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit |
| 中文描述： | 超低功率/电压CMOS SRAM的32K的× 8位 |
| 文件页数： | 8/11页 |
| 文件大小： | 331K |
| 代理商： | BS62UV256JI |
Revision 2.2
April 2001
6
JEDEC
PARAMETER
NAME
PARAMETER
NAME
DESCRIPTION
BS62UV256-15
MIN. TYP. MAX.
UNIT
t
AVAX
t
WC
Write Cycle Time
150
--
ns
t
E1LWH
t
CW
Chip Select to End of Write
150
--
ns
t
AVWL
t
AS
Address Set up Time
0--
--
ns
t
AVWH
t
AW
Address Valid to End of Write
150
--
ns
t
WLWH
t
WP
Write Pulse Width
80
--
ns
t
WHAX
t
WR
Write Recovery Time
(CE , WE)
0--
--
ns
t
WLOZ
t
WHZ
Write to Output in High Z
--
30
ns
t
DVWH
t
DW
Data to Write Time Overlap
40
--
ns
t
WHDX
t
DH
Data Hold from Write Time
0--
--
ns
t
GHOZ
t
OHZ
Output Disable to Output in High Z
0--
30
ns
t
WHQX
t
OW
End ot Write to Output Active
5--
--
ns
AC ELECTRICAL CHARACTERISTICS ( TA = 0oC to + 70oC, Vcc = 2.0V )
WRITE CYCLE
BSI
BS62UV256
R0201-BS62UV256
WRITE CYCLE1 (1)
t WR
(3)
t CW
(11)
(2)
t WP
t AW
t OHZ
(4,10)
t AS
t DH
t DW
D
IN
D
OUT
WE
CE
OE
ADDRESS
(5)
t WC
SWITCHING WAVEFORMS (WRITE CYCLE)
相关PDF资料 |
PDF描述 |
|---|---|
| BS62UV256PC | Ultra Low Power/Voltage CMOS SRAM 32K X 8 bit |
| BS62UV256PI | 1-Line to 10-Line 3.3V Clock Driver with Tri-State Outputs 24-SSOP 0 to 70 |
| BSC034N03LSCG | 22 A, 30 V, 0.0051 ohm, N-CHANNEL, Si, POWER, MOSFET |
| BSC084P03NS3G | 14.9 A, 30 V, 0.0084 ohm, P-CHANNEL, Si, POWER, MOSFET |
| BSF030NE2LQ | 24 A, 25 V, 0.0041 ohm, N-CHANNEL, Si, POWER, MOSFET |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BS-632-1 | 制造商:PennEngineering (PEM) 功能描述: |
| BS6322 | 制造商:n/a 功能描述:Ships in 2 days |
| BS-632-2 | 制造商:PennEngineering (PEM) 功能描述: |
| BS640GBC3V | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
| BS640GBC4V | 制造商:AMD 制造商全称:Advanced Micro Devices 功能描述:64 Megabit (4 M x 16-Bit), 1.8 Volt-only Simultaneous Read/Write, Burst Mode Flash Memory |
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