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| 型号： | BSS84LT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/4页 |
| 文件大小： | 0K |
| 描述： | MOSFET P-CH 50V 130MA SOT-23 |
| 产品目录绘图： | MOSFET SOT-23-3 Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET P 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 50V |
| 电流 - 连续漏极(Id) @ 25° C： | 130mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 10 欧姆 @ 100mA，5V |
| Id 时的 Vgs(th)（最大）： | 2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 30pF @ 5V |
| 功率 - 最大： | 225mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | TO-236-3，SC-59，SOT-23-3 |
| 供应商设备封装： | SOT-23-3（TO-236） |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | BSS84LT1GOSDKR |
BSS84L, BVSS84L
Power MOSFET
Single P-Channel SOT-23
-50 V, 10 W
? SOT ? 23 Surface Mount Package Saves Board Space
? AEC Q101 Qualified and PPAP Capable ? BVSS84L
? These Devices are Pb ? Free and are RoHS Compliant
http://onsemi.com
V (BR)DSS R DS(ON) MAX
MAXIMUM RATINGS (T J = 25 ° C unless otherwise noted)
? 50 V
10 W @ 10 V
Rating
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage ? Continuous
V DSS
V GS
50
± 20
Vdc
Vdc
P ? Channel
3
Drain Current
mA
Continuous @ T A = 25 ° C
Pulsed Drain Current (t p ≤ 10 m s)
I D
I DM
130
520
Total Power Dissipation @ T A = 25 ° C
Operating and Storage Temperature
Range
Thermal Resistance ? Junction ? to ? Ambient
P D
T J , T stg
R q JA
225
? 55 to
150
556
mW
° C
° C/W
1
2
Maximum Lead Temperature for Soldering
Purposes, for 10 seconds
T L
260
° C
3
SOT ? 23
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1
2
CASE 318
STYLE 21
MARKING DIAGRAM & PIN ASSIGNMENT
3
Drain
PD M G
G
1
Gate
2
Source
PD
M
G
= Specific Device Code
= Date Code
= Pb ? Free Package
(*Note: Microdot may be in either location)
ORDERING INFORMATION
Device
BSS84LT1G
BVSS84LT1G
Package
SOT ? 23
(Pb ? Free)
SOT ? 23
Shipping ?
3000 / Tape & Reel
3000 / Tape & Reel
(Pb ? Free)
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specifications
Brochure, BRD8011/D.
? Semiconductor Components Industries, LLC, 2012
October, 2012 ? Rev. 8
1
Publication Order Number:
BSS84LT1/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BSS84LT1G | 制造商:ON Semiconductor 功能描述:MOSFET |
| BSS84LT3 | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | P-CHANNEL | 50V V(BR)DSS | 100MA I(D) | TO-236AB |
| BSS84-NL | 制造商:FAIRCHILD 制造商全称:Fairchild Semiconductor 功能描述:a??0.13A, a??50V. RDS(ON) = 10?? @ VGS = a??5 V |
| BSS84P | 制造商:Infineon Technologies 功能描述:Trans MOSFET P-CH 60V 0.17A 3-Pin SOT-23 制造商:Infineon Technologies AG 功能描述:MOSFET P SOT-23 制造商:Infineon Technologies AG 功能描述:MOSFET, P, SOT-23 制造商:Infineon Technologies AG 功能描述:P CH MOSFET, -60V, 170mA, SOT-23; Transistor Polarity:P Channel; Continuous Drain Current Id:170mA; Drain Source Voltage Vds:-60V; On Resistance Rds(on):8ohm; Rds(on) Test Voltage Vgs:-10V; Threshold Voltage Vgs Typ:-1.5V ;RoHS Compliant: Yes 制造商:Infineon Technologies AG 功能描述:MOSFET P-Channel 60V 0.17A SOT23 |
| BSS84P E6433 | 功能描述:MOSFET P-CH 60V 170MA SOT-23 RoHS:是 类别:分离式半导体产品 >> FET - 单 系列:SIPMOS® 标准包装:1,000 系列:MESH OVERLAY™ FET 型:MOSFET N 通道，金属氧化物 FET 特点:逻辑电平门 漏极至源极电压(Vdss):200V 电流 - 连续漏极(Id) @ 25° C:18A 开态Rds（最大）@ Id, Vgs @ 25° C:180 毫欧 @ 9A，10V Id 时的 Vgs(th)（最大）:4V @ 250µA 闸电荷(Qg) @ Vgs:72nC @ 10V 输入电容 (Ciss) @ Vds:1560pF @ 25V 功率 - 最大:40W 安装类型:通孔 封装/外壳:TO-220-3 整包 供应商设备封装:TO-220FP 包装:管件 |
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