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| 型号： | NTK3134NT1G |
| 厂商： | ON Semiconductor |
| 文件页数： | 1/5页 |
| 文件大小： | 0K |
| 描述： | MOSFET N-CH 20V 750MA SOT-723 |
| 产品目录绘图： | MOSFET SOT-723 Pkg |
| 标准包装： | 10 |
| FET 型： | MOSFET N 通道，金属氧化物 |
| FET 特点： | 逻辑电平门 |
| 漏极至源极电压(Vdss)： | 20V |
| 电流 - 连续漏极(Id) @ 25° C： | 750mA |
| 开态Rds（最大）@ Id, Vgs @ 25° C： | 350 毫欧 @ 890mA，4.5V |
| Id 时的 Vgs(th)（最大）： | 1.2V @ 250µA |
| 输入电容 (Ciss) @ Vds： | 120pF @ 16V |
| 功率 - 最大： | 310mW |
| 安装类型： | 表面贴装 |
| 封装/外壳： | SOT-723 |
| 供应商设备封装： | SOT-723 |
| 包装： | 标准包装 |
| 产品目录页面： | 1558 (CN2011-ZH PDF) |
| 其它名称： | NTK3134NT1GOSDKR |
NTK3134N
Power MOSFET
20 V, 890 mA, Single N ? Channel with
ESD Protection, SOT ? 723
Features
? N ? Channel Switch with Low R DS(on)
? 44% Smaller Footprint and 38% Thinner than SC89
? Low Threshold Levels Allowing 1.5 V R DS(on) Rating
? Operated at Low Logic Level Gate Drive
? These Devices are Pb ? Free, Halogen Free/BFR Free and are RoHS
Compliant
Applications
? Load/Power Switching
? Interface Switching
? Logic Level Shift
? Battery Management for Ultra Small Portable Electronics
V (BR)DSS
20 V
http://onsemi.com
R DS(on) TYP
0.20 W @ 4.5 V
0.26 W @ 2.5 V
0.43 W @ 1.8 V
0.56 W @ 1.5 V
SOT ? 723 (3 ? LEAD)
3
I D Max
890 mA
790 mA
700 mA
200 mA
MAXIMUM RATINGS (T J = 25 ° C unless otherwise stated)
Parameter
Symbol
Value
Unit
Drain ? to ? Source Voltage
Gate ? to ? Source Voltage
Continuous Drain Steady
Current (Note 1) State
T A = 25 ° C
T A = 85 ° C
V DSS
V GS
I D
20
± 6
890
640
V
V
mA
1
Top View
2
1 ? Gate
2 ? Source
3 ? Drain
t ≤ 5s
T A = 25 ° C
990
MARKING DIAGRAM
Power Dissipation
(Note 1)
Steady
State
T A = 25 ° C
P D
450
mW
KF M
Continuous Drain
Current (Note 2)
Power Dissipation
(Note 2)
t ≤ 5s
Steady
State
T A = 25 ° C
T A = 85 ° C
T A = 25 ° C
I D
P D
550
750
540
310
mA
mW
SOT ? 723
CASE 631AA
STYLE 5
KF
M
1
= Specific Device Code
= Date Code
NTK3134NT1H
NTK3134NT5H
Pulsed Drain t p = 10 m s I DM 1.8 A
Current
Operating Junction and Storage T J , T STG ? 55 to ° C
Temperature 150
Lead Temperature for Soldering Purposes T L 260 ° C
(1/8” from case for 10 s)
Stresses exceeding Maximum Ratings may damage the device. Maximum
Ratings are stress ratings only. Functional operation above the Recommended
Operating Conditions is not implied. Extended exposure to stresses above the
Recommended Operating Conditions may affect device reliability.
1. Surface mounted on FR4 board using 1 in sq pad size (Cu area = 1.127 in sq
[1 oz] including traces)
2. Surface mounted on FR4 board using the minimum recommended pad size
ORDERING INFORMATION
Device Package Shipping ?
NTK3134NT1G
SOT ? 723* 4000 / Tape & Reel
NTK3134NT5G
SOT ? 723* 8000 / Tape & Reel
?For information on tape and reel specifications,
including part orientation and tape sizes, please
refer to our Tape and Reel Packaging Specification
Brochure, BRD8011/D.
*These packages are inherently Pb ? Free.
? Semiconductor Components Industries, LLC, 2013
March, 2013 ? Rev. 2
1
Publication Order Number:
NTK3134N/D
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相关代理商/技术参数 |
参数描述 |
|---|---|
| NTK3134NT1H | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTK3134NT5G | 功能描述:MOSFET 20V/6V N CH T1 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTK3134NT5H | 功能描述:MOSFET RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
| NTK3139P | 制造商:ONSEMI 制造商全称:ON Semiconductor 功能描述:Power MOSFET −20 V, −780 mA, Single P−Channel with ESD Protection, SOT−723 |
| NTK3139PT1G | 功能描述:MOSFET 20V/6V P CH T1 780mA 0.4 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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