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参数资料
| 型号： | BST76 |
| 厂商： | NXP Semiconductors N.V. |
| 英文描述： | N-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | N沟道增强型垂直D-MOS晶体管 |
| 文件页数： | 2/12页 |
| 文件大小： | 78K |
| 代理商： | BST76 |
1997 Jun 20
2
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BST76A
FEATURES
Direct interface to C-MOS, TTL, etc.
High-speed switching
No secondary breakdown.
APPLICATIONS
Line current interrupter in telephone sets
Relay, high-speed and line transformer drivers.
DESCRIPTION
N-channel enhancement mode vertical D-MOS transistor
in a SOT54 (TO-92) variant package.
PINNING - SOT54 (TO-92) variant
PIN
SYMBOL
DESCRIPTION
1
2
3
s
g
d
source
gate
drain
Fig.1 Simplified outline and symbol.
handbook, halfpage
1
3
2
MAM146
s
d
g
QUICK REFERENCE DATA
SYMBOL
PARAMETER
CONDITIONS
TYP.
MAX.
UNIT
V
DS
V
DS(SM)
V
GSO
I
D
P
tot
R
DSon
y
fs
drain-source voltage (DC)
drain-source voltage
gate-source voltage (DC)
drain current (DC)
total power dissipation
drain-source on-state resistance
forward transfer admittance
7
250
180
200
±
20
300
1
10
V
V
V
mA
W
mS
non-repetitive peak; t
p
≤
2 mS
open drain
T
amb
≤
25
°
C
I
D
= 15 mA; V
GS
= 3 V
I
D
= 300 mA; V
DS
= 15 V
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BST76A | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel enhancement mode vertical D-MOS transistor |
| BST80 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel enhancement mode vertical D-MOS transistor |
| BST80T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 500MA I(D) | SOT-89 |
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| BST82 /T3 | 功能描述:MOSFET TRENCH-100 -TAPE 13 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
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