- 您现在的位置：买卖IC网 > PDF目录373028 > BST76 (NXP Semiconductors N.V.) N-channel enhancement mode vertical D-MOS transistor PDF资料下载
参数资料
| 型号： | BST76 |
| 厂商： | NXP Semiconductors N.V. |
| 英文描述： | N-channel enhancement mode vertical D-MOS transistor |
| 中文描述： | N沟道增强型垂直D-MOS晶体管 |
| 文件页数： | 5/12页 |
| 文件大小： | 78K |
| 代理商： | BST76 |
1997 Jun 20
5
Philips Semiconductors
Product specification
N-channel enhancement mode
vertical D-MOS transistor
BST76A
Fig.6 Output characteristics; typical values.
T
j
= 25
°
C.
(1) V
GS
= 10 V.
(2) V
GS
= 5 V.
(3) V
GS
= 4 V.
(4) V
GS
= 3 V.
handbook, halfpage
(A)
0
.
8
0
(1)
(2)
(3)
(4)
10
0
VDS (V)
0
.
2
0
.
4
0
.
6
2
4
6
8
MDA164
Fig.7 Transfer characteristic; typical values.
V
DS
= 10 V; T
j
= 25
°
C.
handbook, halfpage
(A)
0
.
8
0
10
0
VGS (V)
0
.
2
0
.
4
0
.
6
2
4
6
8
MDA170
Fig.8
Drain current as a function of drain-source
on-state resistance; typical values.
T
j
= 25
°
C.
(1) V
GS
= 10 V.
(2) V
GS
= 5 V.
(3) V
GS
= 4 V.
handbook, halfpage
14
4
ID
(mA)
RDSon (
)
6
8
10
12
3
10
2
10
MDA169
(1)
(2)
(3)
Fig.9
Temperature coefficient of gate-source
threshold voltage; typical values.
V
GSth
at 0.1 mA.
k
V
at T
j
GSth
at 25
°
C
V
=
handbook, halfpage
50
1
0.8
0.6
k
0
50
150
100
MDA167
Tj (
o
C)
相关PDF资料 |
PDF描述 |
|---|---|
| BST80 | N-channel enhancement mode vertical D-MOS transistor |
| BST84 | N-channel enhancement mode vertical D-MOS transistor |
| BST86 | N-channel enhancement mode vertical D-MOS transistor |
| BSV17-16 | TRANSISTOR | BJT | PNP | 80V V(BR)CEO | 1A I(C) | TO-205AD |
| BSV17 | Small Signal Transistors |
相关代理商/技术参数 |
参数描述 |
|---|---|
| BST76A | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel enhancement mode vertical D-MOS transistor |
| BST80 | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:N-channel enhancement mode vertical D-MOS transistor |
| BST80T/R | 制造商:未知厂家 制造商全称:未知厂家 功能描述:TRANSISTOR | MOSFET | N-CHANNEL | 80V V(BR)DSS | 500MA I(D) | SOT-89 |
| BST82 | 制造商:NXP Semiconductors 功能描述:Trans MOSFET N-CH 100V 0.19A 3-Pin TO-236AB Bulk 制造商:NXP Semiconductors 功能描述:MOSFET N SOT-23 制造商:NXP Semiconductors 功能描述:MOSFET, N, SOT-23 制造商:NXP Semiconductors 功能描述:MOSFET N-Channel 100V 0.19A TO236AB |
| BST82 /T3 | 功能描述:MOSFET TRENCH-100 -TAPE 13 RoHS:否 制造商:STMicroelectronics 晶体管极性:N-Channel 汲极/源极击穿电压:650 V 闸/源击穿电压:25 V 漏极连续电流:130 A 电阻汲极/源极 RDS（导通）:0.014 Ohms 配置:Single 最大工作温度: 安装风格:Through Hole 封装 / 箱体:Max247 封装:Tube |
发布紧急采购，3分钟左右您将得到回复。