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参数资料
| 型号： | BT132-600D |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 参考电压二极管 |
| 英文描述： | 4Q Triac |
| 中文描述： | 4Q双向可控硅 |
| 封装： | BT132-600D<SOT54 (TO-92)|<<http://www.nxp.com/packages/SOT54.html<1<Always Pb-free,;BT132-600D<SOT54 (TO-92)|<<http://www.nxp.com/packages/SOT54.html<1<week 5, 2005 |
| 文件页数： | 2/8页 |
| 文件大小： | 90K |
| 代理商： | BT132-600D |
NXP Semiconductors
Product specification
Triacs
BT132 series D
logic level
GENERAL DESCRIPTION
QUICK REFERENCE DATA
Glass passivated,
sensitive
gate
SYMBOL
PARAMETER
MAX.
MAX. UNIT
triacs in a plastic envelope, intended
for
use
in
general
purpose
BT132-
500D
600D
bidirectional switching and phase
V
DRM
Repetitive peak off-state voltages
500
600
V
control applications. These devices
I
T(RMS)
RMS on-state current
1
A
are intended to be interfaced directly
I
TSM
Non-repetitive peak on-state current
16
A
to microcontrollers, logic integrated
circuits and other low power gate
trigger circuits.
PINNING - TO92
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
main terminal 2
2
gate
3
main terminal 1
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum System (IEC 134).
SYMBOL
PARAMETER
CONDITIONS
MIN.
MAX.
UNIT
-500
-600
V
DRM
Repetitive peak off-state
-
500
1
600
1
V
voltages
I
T(RMS)
RMS on-state current
full sine wave; T
lead
≤51 C
-
1
A
I
TSM
Non-repetitive peak
full sine wave; T
j = 25 C prior to
on-state current
surge
t = 20 ms
-
16
A
t = 16.7 ms
-
17.6
A
I
2tI2t for fusing
t = 10 ms
-
1.28
A
2s
dI
T/dt
Repetitive rate of rise of
I
TM = 1.5 A; IG = 0.2 A;
on-state current after
dI
G/dt = 0.2 A/
μs
triggering
T2+ G+
-
50
A/
μs
T2+ G-
-
50
A/
μs
T2- G-
-
50
A/
μs
T2- G+
-
10
A/
μs
I
GM
Peak gate current
-
2
A
V
GM
Peak gate voltage
-
5
V
P
GM
Peak gate power
-
5
W
P
G(AV)
Average gate power
over any 20 ms period
-
0.5
W
T
stg
Storage temperature
-40
150
C
T
j
Operating junction
-
125
C
temperature
T1
T2
G
32 1
1 Although not recommended, off-state voltages up to 800V may be applied without damage, but the triac may
switch to the on-state. The rate of rise of current should not exceed 3 A/
μs.
January 1998
1
Rev 1.000
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相关代理商/技术参数 |
参数描述 |
|---|---|
| BT132-600D,116 | 功能描述:双向可控硅 Thyristor TRIAC 600V 17.6A 3-Pin RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| BT132-600D,412 | 功能描述:双向可控硅 THYR AND TRIACS RoHS:否 制造商:STMicroelectronics 开启状态 RMS 电流 (It RMS):16 A 不重复通态电流:120 A 额定重复关闭状态电压 VDRM:600 V 关闭状态漏泄电流（在 VDRM IDRM 下）:5 uA 开启状态电压: 保持电流（Ih 最大值）:45 mA 栅触发电压 (Vgt):1.3 V 栅触发电流 (Igt):1.75 mA 最大工作温度: 安装风格:Through Hole 封装 / 箱体:TO-220AB |
| BT132-600D116 | 制造商:NXP Semiconductors 功能描述: |
| BT132SERIESD | 制造商:未知厂家 制造商全称:未知厂家 功能描述:Triacs logic level |
| BT1337TC | 制造商:未知厂家 制造商全称:未知厂家 功能描述: |
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