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参数资料
| 型号： | BTH151S-650R |
| 厂商： | NXP Semiconductors N.V. |
| 元件分类： | 参考电压二极管 |
| 英文描述： | SCR |
| 封装： | BTH151S-650R<SOT428 (DPAK)|<<http://www.nxp.com/packages/SOT428.html<1<week 1, 2005,; |
| 文件页数： | 3/8页 |
| 文件大小： | 116K |
| 代理商： | BTH151S-650R |
Semiconductors
Product specification
Thyristor
High Repetitive Surge
BTH151S-650R
THERMAL RESISTANCES
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
R
th j-mb
Thermal resistance
junction to mounting base
Thermal resistance
junction to ambient
-
-
1.8
K/W
R
th j-a
pcb (FR4) mounted; footprint as in Fig.14
-
75
-
K/W
STATIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
I
GT
I
L
I
H
V
T
V
GT
Gate trigger current
Latching current
Holding current
On-state voltage
Gate trigger voltage
V
D
= 12 V; I
T
= 0.1 A
V
D
= 12 V; I
GT
= 0.1 A
V
= 12 V; I
GT
= 0.1 A
I
T
= 23 A
V
D
= 12 V; I
T
= 0.1 A
V
D
= V
DRM(max)
; I
T
= 0.1 A; T
j
= 125 C
V
D
= V
DRM(max)
; V
R
= V
RRM(max)
; T
j
= 125 C
-
-
-
-
-
2
10
7
1.4
0.6
0.4
0.1
15
40
20
1.75
1.5
-
0.5
mA
mA
mA
V
V
V
mA
0.25
-
I
D
, I
R
Off-state leakage current
DYNAMIC CHARACTERISTICS
T
j
= 25 C unless otherwise stated
SYMBOL
PARAMETER
CONDITIONS
MIN.
TYP.
MAX.
UNIT
dV
D
/dt
Critical rate of rise of
off-state voltage
V
= 67% V
; T
j
= 125 C;
exponential waveform;
Gate open circuit
R
= 100
Ω
50
200
-
130
1000
2
-
-
-
V/
μ
s
V/
μ
s
μ
s
t
gt
Gate controlled turn-on
time
Circuit commutated
turn-off time
I
TM
= 40 A; V
D
= V
DRM(max)
; I
G
= 0.1 A;
dI
G
/dt = 5 A/
μ
s
V
D
= 67% V
DRM(max)
; T
j
= 125 C;
I
= 20 A; V
/dt = 30 A/
μ
s;
dV
D
/dt = 50 V/
μ
s; R
GK
= 100
Ω
t
q
-
70
-
μ
s
Fig.1. Repetitive surge conditions. I
P
=60A (f=50Hz) at Tc=45C. Maximum number of cycles n=100k. Repetitive
cycle T=3 seconds minimum.
10ms
Ip = 60 A
3 s (Minimum)
March 2001
2
Rev 1.001
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