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参数资料
| 型号： | BU1706A |
| 厂商： | NXP SEMICONDUCTORS |
| 元件分类： | 功率晶体管 |
| 英文描述： | Silicon Diffused Power Transistor |
| 中文描述： | 5 A, 850 V, NPN, Si, POWER TRANSISTOR, TO-220AB |
| 封装： | PLASTIC, TO-220AB, 3 PIN |
| 文件页数： | 2/7页 |
| 文件大小： | 76K |
| 代理商： | BU1706A |
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU1706A
STATIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
I
CES
Collector cut-off current
1
I
CES
I
CES
CONDITIONS
V
BE
= 0 V; V
CE
= V
V
BE
= 0 V; V
CE
= 1500 V
V
BE
= 0 V; V
CE
= V
CESMmax
;
T
j
V
= 12 V; I
= 0 A
I
= 0 A; I
C
= 100 mA;
L = 25 mH
I
C
= 1.5 A; I
B
= 0.3 A
I
C
= 1.5 A; I
B
= 0.3 A
I
C
= 5 mA; V
= 10 V
I
C
= 400 mA; V
= 3 V
I
C
= 1.5 A; V
CE
= 1 V
MIN.
-
-
-
TYP.
-
-
-
MAX.
1.0
20
2.0
UNIT
mA
μ
A
mA
I
EBO
V
CEOsust
Emitter cut-off current
Collector-emitter sustaining voltage
-
-
-
1
-
mA
V
750
V
CEsat
V
BEsat
h
FE
h
FE
h
FE
Collector-emitter saturation voltage
Base-emitter saturation voltage
DC current gain
-
-
8
-
-
-
1.0
1.3
-
35
-
V
V
12
5
18
7
DYNAMIC CHARACTERISTICS
T
mb
= 25 C unless otherwise specified
SYMBOL
PARAMETER
Switching times (resistive load)
t
on
Turn-on time
t
s
Turn-off storage time
t
f
Turn-off fall time
Switching times (inductive load)
CONDITIONS
I
Con
= 1.5 A; I
Bon
= -I
Boff
= 0.3 A
TYP.
MAX.
UNIT
1.1
5
0.75
1.5
6.5
1.0
μ
s
μ
s
μ
s
I
= 1.5 A; I
Bon
= 0.3 A; L
B
= 1
μ
H;
-V
BB
= 5 V
t
s
t
f
Turn-off storage time
Turn-off fall time
Switching times (inductive load)
2.0
0.25
3.0
0.6
μ
s
μ
s
I
= 1.5 A; I
Bon
= 0.3 A; L
B
= 1
μ
H;
-V
BB
= 5 V; T
j
t
s
t
f
Turn-off storage time
Turn-off fall time
2.2
0.2
3.3
0.7
μ
s
μ
s
Fig.1. Test circuit for V
CEOsust
.
Fig.2. Oscilloscope display for V
CEOsust
.
+ 50v
100-200R
Horizontal
Vertical
Oscilloscope
1R
6V
30-60 Hz
300R
VCE / V
min
VCEOsust
IC / mA
100
200
250
0
1
Measured with half sine-wave voltage (curve tracer).
September 1997
2
Rev 1.000
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|---|---|
| BU1706AB | 制造商:PHILIPS 制造商全称:NXP Semiconductors 功能描述:Silicon Diffused Power Transistor |
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