参数资料
型号: BU2506DX
厂商: NXP SEMICONDUCTORS
元件分类: 功率晶体管
英文描述: Silicon Diffused Power Transistor
中文描述: 5 A, 700 V, NPN, Si, POWER TRANSISTOR
封装: PLASTIC, FULL PACK-3
文件页数: 1/7页
文件大小: 66K
代理商: BU2506DX
Philips Semiconductors
Product specification
Silicon Diffused Power Transistor
BU2506DF
GENERAL DESCRIPTION
Enhanced performance, new generation, high-voltage, high-speed switching npn transistor with an integrated
damper diode in a plastic full-pack envelope intended for use in horizontal deflection circuits of colour television
receivers. Features exceptional tolerance to base drive and collector current load variations resulting in a very low
worst case dissipation.
QUICK REFERENCE DATA
SYMBOL
V
CESM
V
CEO
I
C
I
CM
P
tot
V
CEsat
I
Csat
V
F
t
f
PARAMETER
Collector-emitter voltage peak value
Collector-emitter voltage (open base)
Collector current (DC)
Collector current peak value
Total power dissipation
Collector-emitter saturation voltage
Collector saturation current
Diode forward voltage
Fall time
CONDITIONS
V
BE
= 0 V
TYP.
-
-
-
-
-
-
3.0
1.6
0.25
MAX.
1500
700
5
8
45
5.0
-
2.0
0.5
UNIT
V
V
A
A
W
V
A
V
μ
s
T
hs
25 C
I
C
= 3.0 A; I
B
= 0.79 A
I
F
= 3.0 A
I
Csat
= 3.0 A; I
B(end)
= 0.67 A
PINNING - SOT199
PIN CONFIGURATION
SYMBOL
PIN
DESCRIPTION
1
base
2
collector
3
emitter
case isolated
LIMITING VALUES
Limiting values in accordance with the Absolute Maximum Rating System (IEC 134)
SYMBOL
PARAMETER
V
CESM
Collector-emitter voltage peak value
V
CEO
Collector-emitter voltage (open base)
I
C
Collector current (DC)
I
CM
Collector current peak value
I
B
Base current (DC)
I
BM
Base current peak value
-I
B(AV)
Reverse base current
-I
BM
Reverse base current peak value
1
P
tot
Total power dissipation
T
stg
Storage temperature
T
j
Junction temperature
CONDITIONS
V
BE
= 0 V
MIN.
-
-
-
-
-
-
-
-
-
-65
-
MAX.
1500
700
5
8
3
5
100
4
45
150
150
UNIT
V
V
A
A
A
A
mA
A
W
C
C
average over any 20 ms period
T
hs
25 C
1
2
3
case
b
c
e
Rbe
1
Turn-off current.
September 1997
1
Rev 1.400
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